Electroluminescent device

ABSTRACT

Embodiments of the present invention relate to an electroluminescent device. The electroluminescent device includes an image sensor structure, a first light blocking structure, a first insulation layer, and an electroluminescent structure, which are sequentially stacked. The electroluminescent structure includes lower electrodes, luminous layers disposed on the lower electrodes, and an upper electrode disposed on the luminous layers. The first light blocking structure has effective pinholes. The image sensor structure includes effective image sensors that overlap the effective pinholes. The lower electrodes do not overlap the effective pinholes. The electroluminescent device has a good fingerprint recognition function.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority under 35 U.S.C. 119 from, andthe benefit of, Korean patent application number 10-2019-0086097, filedon Jul. 17, 2019 in the Korean Intellectual Property Office, thecontents of which are herein incorporated by reference in theirentirety.

BACKGROUND Technical Field

Various embodiments of the present disclosure are directed to anelectroluminescent device. More particularly, embodiments of the presentdisclosure are directed to an electroluminescent device that includes afingerprint sensor.

Discussion of the Related Art

An electroluminescent device has a fast response speed and high luminousefficiency, luminance and field of view by using a self-emitting lightemitting diode. Recently, as electroluminescent devices such assmartphones and tablet PCs arc used in various ways, biometricinformation authentication methods that use fingerprints, etc., of auser have become widely used. To provide a fingerprint sensing function,an electroluminescent device is provided with a fingerprint sensor insuch a way that the fingerprint sensor is installed in or mounted to theelectroluminescent device.

For example, the fingerprint sensor can be configured as a photo-sensingtype sensor. A photo-sensing fingerprint sensor includes a light source,a lens, and an optical sensor array. If a fingerprint sensor is attachedto a luminous panel, the thickness of the electroluminescent device mayincrease, and the production cost of the electroluminescent device mayincrease.

SUMMARY

Various embodiments of the present disclosure are directed to anelectroluminescent device that is thinner than previous devices whileimproving reliability.

Some embodiments of the present disclosure provide an electroluminescentdevice, comprising a first insulation layer, an electroluminescentstructure that includes lower electrodes disposed on the firstinsulation layer, luminous layers disposed on the lower electrodes, andan upper electrode disposed on the luminous layers, a first lightblocking structure disposed under the first insulation layer and thatincludes first effective pinholes, and an image sensor structuredisposed under the first light blocking structure and that includeseffective image sensors that overlap the first effective pinholes. Here,the lower electrodes do not overlap the first effective pinholes.

In an embodiment, the first light blocking structure further comprisesfirst dummy pinholes. Here, the first dummy pinhole is located betweenthe first effective pinholes, and the first effective pinholes and thefirst dummy pinholes form a single grid arrangement in plan view.

In an embodiment, the electroluminescent device further comprises asecond light blocking structure disposed between the first lightblocking structure and the image sensor structure, and that includes asecond light blocking area and second effective pinholes. Here, thesecond light blocking area does not overlap the first effective pinholesand blocks light passing through the first dummy pinholes, and thesecond effective pinholes overlap the first effective pinholes.

In an embodiment, the electroluminescent device further comprises asecond light blocking structure disposed between the first lightblocking structure and the image sensor structure, and that includes asecond light blocking area and second effective pinholes. Here, thesecond light blocking area does not overlap the first effectivepinholes, and the second effective pinholes overlap the first effectivepinholes.

In an embodiment, the second light blocking area includes an additionalpinhole.

In an embodiment, the electroluminescent device further comprises alight blocking member provided over or under the additional pinhole andthat overlaps the additional pinhole.

In an embodiment, the additional pinhole is smaller than the secondeffective pinhole.

In an embodiment, a shortest plane distance from an optical center ofthe first effective pinhole to the lower electrodes is greater than aplane distance measured from the optical center of the first effectivepinhole to an inner wall of the first effective pinhole in a firstdirection in which the shortest plane distance from the optical centerof the first effective pinhole to the lower electrodes is measured.

In an embodiment, the lower electrodes include a single first lowerelectrode that is firstly closest in plan view to the optical center ofthe first effective pinhole, and a single second lower electrode that issecondly closest in plan view to the optical center of the firsteffective pinhole.

In an embodiment, a shortest plane distance from the optical center ofthe first effective pinhole to the single second lower electrode ismeasured in a second direction, and an angle between the first andsecond directions is not k×180°, where k is integers other than zero.

In an embodiment, the lower electrodes include a single first lowerelectrode that is firstly closest in plan view to the optical center ofthe first effective pinhole, and at least two second lower electrodesthat are secondly closest in plan view to the optical center of thefirst effective pinhole.

In an embodiment, the lower electrodes include at least two first lowerelectrodes that are firstly closest in plan view to the optical centerof the first effective pinhole.

In an embodiment, the electroluminescent device further comprises apixel defining layer disposed on the first insulation layer and thatcovers edges of the lower electrodes, and spacers disposed on the pixeldefining layer to be higher than the pixel defining layer. Here, ashortest plane distance from the optical center of the first effectivepinhole to the spacers is greater than the shortest plane distance fromthe optical center of the first effective pinhole to the lowerelectrodes.

In an embodiment, the electroluminescent device further comprises atouch sensing structure including touch sensing electrodes and bridges,and located above the electroluminescent structure. Here, the bridgeelectrically couples two neighboring touch sensing electrodes to eachother, and a shortest plane distance from the optical center of thefirst effective pinhole to the bridges is greater than the shortestplane distance from the optical center of the first effective pinhole tothe spacers.

In an embodiment, the electroluminescent device further comprises apixel defining layer disposed on the first insulation layer and thatcovers edges of the lower electrodes, and spacers disposed on the pixeldefining layer to be higher titan the pixel defining layer. Here, ashortest plane distance from the optical center of the first effectivepinhole to the spacers is greater titan a plane distance measured fromthe optical center of the first effective pinhole to an inner wall ofthe first effective pinhole in a third direction in which the shortestplane distance from the optical center of the first effective pinhole tothe spacers is measured

In an embodiment, the spacers include a single first spacer that isfirstly closest in plan view to the optical center of the firsteffective pinhole, and a single second spacer that is secondly closestin plan view to the optical center of the first effective pinhole.

In an embodiment, a shortest plane distance from the optical center ofthe first effective pinhole to the second spacer is measured in a fourthdirection, and the third and fourth directions form a single secondangle, and the second angle is not m×180°, where m is integers otherthan zero.

In an embodiment, the spacers include a single first spacer that isfirstly closest in plan view to the optical center of the firsteffective pinhole, and at least two second spacers that are secondlyclosest in plan view to the optical center of the first effectivepinhole.

In an embodiment, the spacers include at least two first spacers thatare firstly closest in plan view to the optical center of the firsteffective pinhole.

In an embodiment, the electroluminescent device further comprises atouch sensing structure that includes touch sensing electrodes andbridges, and is located above the electroluminescent structure. Here,the bridge electrically couples two neighboring touch sensing electrodesto each other, and a shortest plane distance from the optical center ofthe first effective pinhole to the bridges is greater than the shortestplane distance from the optical center of the first effective pinhole tothe spacers.

In an embodiment, the electroluminescent device further comprises atouch sensing structure that includes touch sensing electrodes andbridges, and is located above the electroluminescent structure. Here,the bridge electrically couples two neighboring touch sensing electrodesto each other, and a shortest plane distance from the optical center ofthe first effective pinhole to the bridges is greater than a planedistance measured from the optical center of the first effective pinholeto an inner wall of tire first effective pinhole in a fifth direction inwhich the shortest plane distance from the optical center of the firsteffective pinhole to the bridges is measured.

In an embodiment, the bridges include a single first bridge that isfirstly closest in plan view to the optical center of the firsteffective pinhole, and a single second bridge that is secondly closestin plan view to the optical center of the first effective pinhole.

In an embodiment, a shortest plane distance from the optical center ofthe first effective pinhole to the single second bridge is measured in asixth direction, and the fifth and sixth directions form a third angle,and the third angle is n×180°, where n is integers other than zero.

In an embodiment, the bridges include a single first bridge that isfirstly closest in plan view to the optical center of the firsteffective pinhole, and at least two second bridges that are secondlyclosest in plan view to the optical center of the first effectivepinhole.

In an embodiment the bridges include at least two first bridges that arefirstly closest in plan view to the optical center of the firsteffective pinhole.

In an embodiment, the electroluminescent device further comprises atouch sensing structure that includes bridges and touch sensingelectrodes disposed on a different layer from the bridges, and that islocated above the electroluminescent structure. Here, the bridgeelectrically couples two neighboring touch sensing electrodes to eachother, the bridges include overlap areas that overlap the touch sensingelectrodes, and a shortest plane distance from the optical center of thefirst effective pinhole to the overlap areas is greater than a planedistance measured from the optical center of the first effective pinholeto an inner wall of the first effective pinhole in a direction in whichthe shortest plane distance from the optical center of the firsteffective pinhole to the overlap areas is measured.

In an embodiment, the electroluminescent structure has overlap areaswhere at least two luminous layers overlap, and the first effectivepinhole overlaps the overlap area.

In an embodiment, the electroluminescent device further comprises apixel defining layer disposed on the first insulation layer and thatcovers edges of the lower electrodes, and spacers disposed on the pixeldefining layer to be higher than the pixel defining layer. Here, theoverlap area docs not overlap the spacers.

In an embodiment, the electroluminescent device further comprises apixel defining layer disposed on the first insulation layer and thatcovers edges of the lower electrodes, and spacers disposed on the pixeldefining layer to be higher than the pixel defining layer. Here, thespacer has a curved edge between side and upper surfaces of the spacerin a cross-section, the spacer has a curved edge in plan view, and thespacer overlaps the first effective pinhole.

In an embodiment, the image sensor structure further includes a dummyimage sensor located between the effective image sensors.

Some embodiments of the present disclosure provide an electroluminescentdevice, comprising an electroluminescent structure that includes lowerelectrodes disposed on an insulation layer, luminous layers disposed onthe lower electrodes, and an upper electrode disposed on the luminouslayers, a first light blocking structure located on a same layer as thelower electrodes, and an image sensor structure located under theinsulation layer and that includes effective image sensors. Here, theelectroluminescent structure includes luminous areas where the lowerelectrodes, the luminous layers and the upper electrode overlap eachother to emit light, and the first light blocking structure includes afirst effective pinhole that overlaps the effective image sensor.

In an embodiment, the first light blocking structure is integrallyformed with the lower electrode as a single piece.

In an embodiment, the first light blocking structure is not electricallycoupled to the lower electrodes, the first light blocking structure hasa shape of an island that does not surround the lower electrode, and thefirst light blocking structure is provided in plurality.

In an embodiment, the first light blocking structure is electricallycoupled to the upper electrode.

In an embodiment, the first light blocking structure is not electricallycoupled to the lower electrodes, the first light blocking structure hasa mesh shape with a hole, and the hole surrounds the lower electrode.

In an embodiment, the first light blocking structure is electricallycoupled to the upper electrode.

In an embodiment, the electroluminescent device further comprises asecond light blocking structure located between the first light blockingstructure and the image sensor structure, and that includes secondeffective pinholes. Here, the first effective pinhole overlaps thesecond effective pinhole, and the first effective pinhole is smallerthan the second effective pinhole.

Some embodiments of the present disclosure provide an electroluminescentdevice, comprising an electroluminescent structure that includes lowerelectrodes, luminous layers disposed on the lower electrodes, and anupper electrode disposed on the luminous layers, a light blockingstructure disposed under the electroluminescent structure and thatincludes effective pinholes, an image sensor structure disposed underthe light blocking structure and that includes image sensors thatoverlap the effective pinholes, and a touch sensing structure thatincludes touch sensing electrodes and bridges and that is located abovethe electroluminescent structure. Here, the lower electrodes do notoverlap the effective pinholes, the bridge electrically couples twoneighboring touch sensing electrodes to each other, and at least one ofthe touch sensing electrode and/or the bridge includes at least oneopening that overlaps the effective pinholes.

In an embodiment, the electroluminescent structure comprises luminousareas where the lower electrodes, the luminous layers and the upperelectrode overlap each other to emit light, the at least one of thetouch sensing electrode and/or the bridge further includes a hole thatoverlaps the luminous area, and a size of the opening is greater than asize of the hole.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are plan views of an electroluminescent device inaccordance with an embodiment of the present disclosure.

FIG. 2 is a sectional view of an electroluminescent device illustratedin FIG. 1A or FIG. IB in accordance with an embodiment of the presentdisclosure.

FIG. 3 is a plan view of a light blocking structure of FIG. 2 inaccordance with an embodiment of the present disclosure.

FIG. 4 is a plan view of an electroluminescent device that includes alight blocking structure of FIG. 2 in accordance with an embodiment ofthe present disclosure.

FIGS. 5A to 5D are plan views of an arrangement of pixel circuits,pinholes and image sensors in accordance with an embodiment of thepresent disclosure.

FIG. 6 is a sectional view of an electroluminescent device illustratedin FIG. 1A or FIG. 1B in accordance with an embodiment of the presentdisclosure.

FIG. 7 is a plan view of a touch sensing structure illustrated in FIG.2.

FIG. 8A is an enlarged plan view of portion EA1 of FIG. 7.

FIG. 8B is a sectional view taken along line I-I′ of FIG. 8A inaccordance with an embodiment of the present disclosure.

FIG. 8C is a sectional view taken along line I-I′ of FIG. 8A inaccordance with an embodiment of the present disclosure.

FIG. 8D is an enlarged plan view of portion EA2 of FIG. 8A.

FIG. 9A is a sectional view of an electroluminescent device shown inFIG. 6 in accordance with an embodiment of the present disclosure.

FIG. 9B is an enlarged sectional view of portion EA3 of FIG. 9A.

FIG. 9C is an enlarged sectional view of portion EA4 of FIG. 9A.

FIG. 10 is a sectional view of an electroluminescent device shown inFIG. 6 in accordance with an embodiment of the present disclosure.

FIG. 11 is a sectional view of an electroluminescent device shown inFIG. 6 in accordance with an embodiment of the present disclosure.

FIG. 12 is a sectional view of an electroluminescent device shown inFIG. 6 in accordance with an embodiment of the present disclosure.

FIG. 13 is a sectional view of an electroluminescent device shown inFIG. 6 in accordance with an embodiment of the present disclosure.

FIG. 14 is a sectional view of an electroluminescent device shown inFIG. 6 in accordance with an embodiment of the present disclosure.

FIG. 15 is a sectional view of an electroluminescent device shown inFIG. 6 in accordance with an embodiment of the present disclosure.

FIG. 16 is a sectional view of an electroluminescent device shown inFIG. 6 in accordance with an embodiment of the present disclosure.

FIG. 17 is a sectional view of an electroluminescent device shown inFIG. 6 in accordance with an embodiment of the present disclosure.

FIG. 18 is a plan view of an electroluminescent device shown in FIG. 17in accordance with an embodiment of the present disclosure.

FIG. 19 is a plan view of a positional relationship between effectivepinholes, lower electrodes, spacers and bridges in accordance with anembodiment of the present disclosure.

FIG. 20 is a plan view of a positional relationship between effectivepinholes, lower electrodes, spacers and bridges in accordance with anembodiment of the present disclosure.

FIG. 21 is a circuit diagram of a pixel circuit shown in FIG. 1A or FIG.1B in accordance with an embodiment of the present disclosure.

FIG. 22 is a plan view of a pixel shown in FIG. 21 in accordance with anembodiment of the present disclosure.

FIG. 23 is a sectional view taken along line II-II′ of FIG. 22.

FIG. 24 is a plan view of a pixel shown in FIG. 21 in accordance with anembodiment of the present disclosure.

DETAILED DESCRIPTION

As the present disclosure allows for various changes and numerousembodiments, particular embodiments will be illustrated in the drawingsand described in detail in the written description.

Throughout the disclosure, like reference numerals may refer to likeparts throughout the various figures and embodiments of the presentdisclosure. The sizes of elements in the accompanying drawings may beexaggerated for clarity of illustration.

Hereinafter, exemplary embodiments of the present disclosure will bedescribed in detail with reference to the accompanying drawings.Exemplary embodiments of the present disclosure are not mutuallyexclusive but may be used in combination.

FIGS. 1A and 1B are plan views of an electroluminescent device inaccordance with an embodiment of the present disclosure. To be morespecific, FIGS. 1A and 1B are plan views of an electroluminescent devicethat has a display area in which an image sensor is located, inaccordance with an embodiment of the present disclosure.

Referring to FIGS. 1A and 1B, the electroluminescent device 1 inaccordance with an embodiment of the present disclosure includes adisplay area DA and a non-display area NDA.

According to embodiments, the electroluminescent device 1 may havevarious shapes. For example, the electroluminescent device 1 may havethe shape of a flat rectangle having two pairs of parallel sides thatare respectively parallel to a first direction DR1 and a seconddirection DR2 that is substantially perpendicular to the first directionDR1. The electroluminescent device 1 can display visual information inan image display direction. The visual information may include text,video, photographs, 3D stereoscopic images, etc.

According to embodiments, the electroluminescent device 1 may beentirely flexible or may be flexible only in some areas. As one example,when the electroluminescent device 1 is entirely flexible, theelectroluminescent device 1 is a rollable device. As another example,when only some areas of the electroluminescent device 1 are flexible,the electroluminescent device 1 is a foldable device.

According to embodiments, the display area DA includes pixel circuitsPC. The pixel circuit PC is electrically connected to anelectroluminescent unit ELU, shown in FIG. 2. The electroluminescentunit ELU and the pixel circuit PC am illustrated in FIG. 21.

According to embodiments, the non-display area NDA is located on atleast one side of the display area DA. For example, the non-display areaNDA surrounds the display area DA. For example, the non-display area NDAis an area of the electroluminescent device 1 other than the displayarea DA. Peripheral wiring, peripheral circuits, pads, dummy pixels,etc., are located in the non-display area NDA.

According to embodiments, at least one area of the display area DA is asensing area SA that can sense a user's fingerprint, etc. As oneexample, as illustrated in FIG. 1A, only some of the display area DA isthe sensing area SA. As another example, as illustrated in FIG. 1B, thewhole of the display area DA is the sensing area SA. The non-displayarea NDA that surrounds the display area DA is a non-sensing area NSA.At least one image sensor 160 a (hereinafter, also referred as effectiveimage sensor 160 a) is located within the sensing area SA.

According to embodiments, the electroluminescent device 1 has a firstsurface 1 a, shown in FIG. 2, on which the image is displayed, and asecond surface 1 b, shown in FIG. 2, which is opposite to the firstsurface 1 a, and image sensors 160 a are located closer to the secondsurface 1 b than the first surface 1 a. The electroluminescent unit ELUconnected to the pixel circuit PC, which is located in or adjacent tothe sensing area SA, is used as the light source for the fingerprintsensing of the image sensor 160 a. To be more specific, light EL, shownin FIG. 2, emitted from the electroluminescent unit ELU is reflected bya user's finger to be changed into reflected light RL, shown in FIG. 2,and the image sensor 160 a senses the reflected light RL. Thus, both theelectroluminescent unit ELU and the image sensor 160 a are located inthe sensing area SA. Since the electroluminescent device 1 does not usean external light source but uses the electroluminescent unit ELU as alight source, the thickness of the electroluminescent device 1 can bereduced and a manufacturing cost thereof can be reduced. However,embodiments of the present disclosure can adopt a separate externallight source for sensing the fingerprint, without being limited to theabove configuration.

According to embodiments, the image sensors 160 a can perform variousfunctions, such as those of a touch sensor, a scanner, a camera, etc.,in addition to sensing a fingerprint.

FIG. 2 is a sectional view of an electroluminescent device illustratedin FIG. 1A or FIG. 1B in accordance with an embodiment of the presentdisclosure. FIG. 3 is a plan view of a light blocking structure of FIG.2 in accordance with an embodiment of the present disclosure. FIG. 4 isa plan view of an electroluminescent device that includes a lightblocking structure of FIG. 2 in accordance with an embodiment of thepresent disclosure.

Referring to FIGS. 1A to 4, according to embodiments, theelectroluminescent device 1 includes an electroluminescent panel 100that has an image sensor structure 160. The electroluminescent device 1includes a touch sensing structure 200 located on the electroluminescentpanel 100, and a window 300 located on the touch sensing structure 200.

According to embodiments, the electroluminescent panel 100 displays animage. The electroluminescent panel 100 uses current as a driving powersupply. The electroluminescent panel 100 may be an organicelectroluminescent panel or an inorganic electroluminescent panel.Alternatively, the electroluminescent device 1 may employ a luminouspanel that uses voltage as the driving power supply, instead of theelectroluminescent panel 100 The luminous panel may be a liquid crystalpanel, an electrophoretic panel or an electro-wetting panel.

According to embodiments, the electroluminescent panel 100 includes aluminous module 100 a, the image sensor structure 160, and a protectivelayer 170.

According to embodiments, the luminous module 100 a includes atransparent layer 110, a light blocking structure 120, a pixel circuitstructure 130, an electroluminescent structure 140, and an encapsulationstructure 150.

According to embodiments, the transparent layer 110 may include glass,tempered glass, transparent plastics, etc., and may be rigid orflexible. For example, the transparent layer 110 is a substrate. Here,the expression “the transparent layer 110 is the substrate” means thatstacking processes are performed on the transparent layer 110 with thetransparent layer 110 being at the lowermost position, or that, afterstacking processes are performed on the transparent layer 110, astructure located under the transparent layer 110 is detached from thetransparent layer 110 so that the transparent layer 110 is located atthe lowermost position.

According to embodiments, the pixel circuit structure 130 is locatedabove the transparent layer 110. The pixel circuit structure 130includes at least one conductive layer and at least one insulationlayer. The pixel circuit structure 130 includes a pixel circuit PC thathas a circuit element such as a transistor or a capacitor, and wiringconnected to the pixel circuit PC, such as a signal line or a powerline. The pixel circuit structure 130 further includes peripheral wiringlocated in the non-display area NDA, a peripheral circuit, etc.

According to embodiments, the electroluminescent structure 140 isdisposed on the pixel circuit structure 130. The electroluminescentstructure 140 includes the electroluminescent unit ELU, which isconnected to the pixel circuit PC of the pixel circuit structure 130through a contact hole.

According to embodiments, the encapsulation structure 150 is disposed onthe electroluminescent structure 140 and covers the display area DA ofat least the transparent layer 110. The encapsulation structure 150includes a first inorganic layer, an organic layer on the firstinorganic layer, and a second inorganic layer on the organic layer.Alternatively, the encapsulation structure 150 may be a glass layer.

According to embodiments, the light blocking structure 120 is locatedbetween the transparent layer 110 and the pixel circuit structure 130 inat least the sensing area SA. The light blocking structure 120 includespinholes 120 a (hereinafter, also referred as effective pinholes 120 a)and a light blocking area 120 b. The light blocking area 120 b includesa light blocking material that can absorb or reflect light. For example,the light blocking area 120 b includes an opaque metal. The pinhole 120a is a through hole. A focus F of the reflected light RL is located inthe pinhole 120 a.

According to embodiments, the pinholes 120 a are the same size. Forexample, a width of the pinhole 120 a is approximately ten times or morethe wavelength of incident light so as to prevent diffraction of thelight. Alternatively, in other embodiments, the sizes of the pinholes120 a may differ.

According to embodiments, the pinholes 120 a are spaced apart front eachother at regular intervals. As illustrated in FIG. 4, the pinholes I20 aform a grid arrangement. A distance between the pinholes 120 a in thelight blocking structure 120 is determined based on a distance betweenthe light blocking structure 120 and the image sensor structure 160, thewavelength of the emitted light EL, and the field of view (FOV) requiredfor the pinholes 120 a. For example, 3 to 15 pixel circuits PC may belocated between two neighboring pinholes 120 a to sense the shape of arelatively clear fingerprint. Alternatively, in other embodiments, thedistances between the pinholes 120 a may not be uniform.

According to embodiments, the planar shape of the pinhole 120 a can beany one of a circle, a regular triangle, a square and a regular hexagon.Alternatively, in other embodiments, the pinhole 120 a may have planeshapes other than the circle, regular triangle, the square or theregular hexagon. The density of the pinholes 120 a is uniform throughoutthe sensing area SA. Alternatively, in other embodiments, the density ofthe pinholes 120 a is non-uniform, such that it is high in a first areaof the sensing area SA and is low in a second area different from thefirst area.

According to embodiments, the light blocking structure 120 selectivelytransmits the reflected light RL reflected by a user's fingerprint thattouches the first surface 1 a of the electroluminescent device 1. Someof the reflected light RL incident on the light blocking structure 120is blocked by the light blocking area 120 b, while the remainingreflected light RL passes through the pinholes 120 a to reach the imagesensor structure 160 located under the light blocking structure 120.

According to embodiments, in a plan view, the light blocking structure120 has an area that is greater than or equal to the sensing area SAsuch that an outline of the sensing area SA does not extend out from anoutline of the light blocking structure 120. As one example, when thesensing area SA is the whole of the display area DA, the light blockingstructure 120 has an area that is greater than or equal to the area ofthe display area DA. As another example, when the sensing area SA is apart of the display area DA, the light blocking structure 120 has anarea that is equal to or greater than the sensing area SA and is equalto or less than the display area DA. or has the same area as the sensingarea SA.

According to embodiments, the image sensor structure 100 is locatedunder the transparent layer 110 and overlaps at least one area of theluminous module 100 a. For example, the image sensor structure 160 isattached to a lower portion of the transparent layer 110. The imagesensor structure 160 overlaps at least sensing area SA. The image sensorstructure 160 includes image sensors 160 a that are separated by apredetermined distance to have a predetermined density

According to embodiments, the image sensor 160 a receives reflectedlight RL passing through the pinhole 120 a and generates image data thatcorresponds to the reflected light RL. The image data includesinformation related to valleys and ridges of the user's fingerprint, andthe information is converted into a preliminary image. An inverted imageis obtained by inverting the preliminary image with respect to anoptical center of the preliminary image. A single fingerprint image isobtained by joining the inverted images obtained from the image sensors160 a together in plan view. Here, the optical center of the preliminaryimage is a point where the preliminary image intersects a vertical linethat passes through a focus F.

According to embodiments, the protective layer 170 is located under theimage sensor structure 160. The protective layer 170 is attached to alower surface of the image sensor structure 160 via an adhesive layer.

According to embodiments, a touch sensing structure 200 and a window 300are located above the electroluminescent panel 100.

According to embodiments, the touch sensing structure 200 is located onan upper surface of the electroluminescent panel 100 and senses thetouch of a user's finger.

According to embodiments, the window 300 is located on the touch sensingstructure 200. The window 300 protects the electroluminescent panel 100from external shocks. The window 300 may be flexible. In this case, thewindow 300 contains a colorless transparent plastic material or thewindow 300 is a transparent glass layer having a thickness of from about25 μm to 150 μm. Alternatively, the window 300 may be rigid. In thiscase, the window 300 is a transparent glass layer having a thicknessthat is greater than 150 μm.

According to embodiments, security disabling through fingerprintrecognition includes at least first to seventh steps.

First, according to embodiments, when it is determined by the touchsensing structure 200 that a user's finger has come into contact withthe window 300, a first step is performed to determine whether or not torecognize the fingerprint.

As one example, if the contact continues for a predetermined period,such as contact of 0.5 seconds or more, it can be determined that thecontact is for recognizing the fingerprint. As another example, if thecontact area is at least two or more fingers, such as a double touch bytwo fingers, it can be determined that the contact is for recognizingthe fingerprint.

According to embodiments, when it is determined that the contact is forrecognizing the fingerprint at the first step, a second step isperformed to turn on at least one electroluminescent unit ELU thatcorresponds to the contact area and to emit light to the user's finger.

As one example, a plurality of electroluminescent units ELU in thecontact area is turned on to form a surface light source. To be morespecific, at least some of the electroluminescent units ELU located inthe contact area simultaneously emit light.

As another example, a plurality of electroluminescent units ELU in thecontact area is turned on to form a line light source. As one example,at least some of the electroluminescent units ELU located in the contactarea sequentially emit light in a scan manner. In this case, linearbeams are emitted to form straight or curved lines. In one example, thelinear beam scans the contact area from one side of the contact area tothe other side of the contact area. In another example, the linear beamscans the contact area from a center of the contact area towards an edgethereof. In yet another example, the linear beam may scan the contactarea from the edge of the contact area towards the center thereof.

As another example, only those electroluminescent units ELU in thecontact area emit light of a specific color, such as a blue color havinga short wavelength.

According to embodiments, a third step is for at least one image sensor160 a to receive the reflected light RL from the user's finger. At thethird step, the reflected light RL passes through the pinholes 120 a andis incident on the image sensors 160 a.

Subsequently, according to embodiments, a fourth step is performed toobtain the preliminary image from the image data obtained from the imagesensor 160 a. To be more specific, the image sensor 160 a receives thereflected light RL passing through the pinhole 120 a and generates imagedata corresponding to the reflected light RL. line image data hasinformation related to valleys and ridges of the fingerprint of a user'sfinger, and is converted into the preliminary image.

Next, a fifth step is performed to obtain the inverted image from thepreliminary image. To be more specific, the inverted image is obtainedby inverting the preliminary image with respect to the optical center ofthe preliminary image.

Subsequently, according to embodiments, a sixth step is performed toobtain a single comparison fingerprint image by joining the invertedimages obtained from the image sensors 160 a together in plan view.

Next, according to embodiments, a seventh step is performed to compare apreviously stored reference fingerprint image with the comparisonfingerprint image and thereby determine whether they match each other.When the reference fingerprint image is the same as the comparisonfingerprint image, i.e., the reference fingerprint image matches withthe comparison fingerprint image, security can be disabled. In contrast,if the reference fingerprint image differs from the comparisonfingerprint image, i.e., does not match the comparison fingerprintimage, security is not disabled.

According to embodiments, the electroluminescent device 1 enhances thetouch input of the touch sensing structure 200 through the image sensingof the image sensors 160 a. As one example, it is possible to obtainmore accurate contact information, such as a position of the contactarea, by simultaneously using a first sensing signal sensed in thecontact area through the touch sensing structure 200 and a secondsensing signal sensed from the image sensors 160 a. Alternatively, ifthe image sensors 160 a have a relatively high sensitivity, it ispossible to obtain contact information such as a location of the contactarea without the touch sensing structure 200. Furthermore, if the imagesensors 160 a have a relatively high sensitivity, the image sensors 160a can be used as a camera that photographs an object distant from theelectroluminescent device 1.

FIGS. 5A to 5D are plan views of an arrangement of pixel circuits,pinholes and image sensors in accordance with an embodiment of thepresent disclosure. To be more specific, FIGS. 5A to 5D are plan viewsthat illustrate the relative size, resolution and/or arrangement of thepixel circuits PC, the pinholes 120 a, and the image sensors 160 a,located in the sensing area SA of the display area DA shown in FIGS. 1Aand 1B.

Referring to FIG. 5A, according to embodiments, the sensing area SAincludes the pinholes 120 a, of which there are fewer than there arepixel circuits PC, and the image sensors 160 a, of which there are fewerthan there are pixel circuits PC. For example, the pinholes 120 a andthe image sensors 160 a are smaller in size than the pixel circuits PC.and have a distribution density in the sensing area SA that is less thanthat of the pixel circuits PC. Alternatively, the density of thepinholes 120 a and the image sensors 160 a is not less than that of thepixel circuits PC.

According to embodiments, the number and spacing of pinholes 120 adistributed in the sensing area SA is the same as those of the imagesensors 160 a distributed in the sensing area SA such that there is aone-to-one correspondence between the pinholes 120 a and the imagesensors 160 a. In this case, the pinholes 120 a and the image sensors160 a overlap each other.

According to embodiments, the pinholes 120 a and the image sensors 160 ahave the same size. As one alternative, the pinhole 120 a is larger thanthe image sensor 160 a. As another alternative, the pinhole 120 a issmaller than the image sensor 160 a.

Referring to FIG. 5B, according to embodiments, the sensing area SA hasfewer pinholes 120 a than pixel circuits PC but more image sensors 160 athan pixel circuits PC. The pinholes 120 a and the image sensors 160 aare smaller in size than the pixel circuits PC. The pinholes 120 a havea lower distribution density in the sensing area SA than the pixelcircuits PC, and the image sensors 160 a are compactly distributed inthe sensing area SA with a higher density than pixel circuits PC.

According to embodiments, some of the image sensors 160 a overlap thepinhole 120 a and/or the pixel circuit PC. Alternatively, some of theimage sensors 160 a overlap the pinhole 120 a and/or the pixel circuitPC, while oilier image sensors 160 a are located in gaps between thepixel circuits PC

Referring to FIGS. 5C and 5D, according to embodiments, the imagesensors 160 a distributed in the sensing area SA have smaller sizes andhigher density than the image sensors 160 a illustrated in FIG. 5B. Forexample, the image sensors 160 a in the sensing area SA are separated byintervals that are about 1/10 to 1/100 times smaller than the spacing ofthe pinholes 120 a. In this case, the image sensors 160 a may becompactly distributed in the sensing area SA so that there is no longera one-to-one correspondence between the image sensors 160 a and thepixel circuits PC and/or the pinholes 120 a. Therefore, a moirephenomenon can be prevented or minimized regardless of arrangement ofthe image sensors 160 a with respect to the pixel circuits PC and/or thepinholes 120 a.

According to embodiments, the pinholes 120 a have a distribution densityin the sensing area SA that is equal to or different from that of thepixel circuits PC. As one example, as illustrated in FIG. 5C, thepinholes 120 a have a distribution density in the sensing area SA thatis the same as that of the pixel circuits PC. As another example, asillustrated in FIG. 5D, the pinholes 120 a have a distribution densityin the sensing area SA that is lower than that of the pixel circuits PC.

As illustrated in FIGS. 5A to 50. according to embodiments, the pinholes120 a and the image sensors 160 a are regularly arranged in the sensingarea SA. Alternatively, in other embodiments, the pinholes 120 a and/orthe image sensors 160 a can be irregularly distributed within thesensing area SA, or may have different densities in different areas ofthe sensing area SA.

FIG. 6 is a sectional view of an electroluminescent device illustratedin FIG. 1A or FIG. 1B in accordance with an embodiment of the presentdisclosure. The description of components that are the same as orsimilar to those of the electroluminescent device described in FIG. 2will be omitted herein.

Referring to FIG. 6, according to embodiments, the pixel circuitstructure 130 is used as a first light blocking structure 130 toselectively block or transmit reflected light RL reflected by a user'sfingerprint. The first light blocking structure 130 includes pinholes130 a (hereinafter, also referred as effective pinholes 130 a).

According to embodiments, a second light blocking structure 120 islocated between the first light blocking structure 130 and thetransparent layer 110. The first light blocking structure 130 has aplurality of pinholes 130 a. The pinholes 130 a of the first lightblocking structure 130 overlap the pinholes 120 a of the second lightblocking structure 120.

According to embodiments, the pinholes 130 a of the first light blockingstructure 130 have the same size as the pinholes 120 a of the secondlight blocking structure 120. Alternatively, in other embodiments, thepinholes 130 a of the first light blocking structure 130 differ in sizefrom the pinholes 120 a of the second light blocking structure 120.

As one example, as illustrated in FIG. 6, the pinholes 130 a of thefirst light blocking structure 130 have a smaller width than thepinholes 120 a of the second light blocking structure 120. To be morespecific, the pinholes 130 a of the first light blocking structure 130and the pinholes 120 a of the second light blocking structure 120respectively have first and second widths in a range of 5 μm to 20 μm,where the second width is larger than the first width. In this case, afocus F is located at the pinhole 130 a of the first light blockingstructure 130.

As another example, the pinholes 130 a of the first light blockingstructure 130 have a larger width than the pinholes 120 a of the secondlight blocking structure 120. To be more specific, the pinholes 130 a ofthe first light blocking structure 130 and the pinholes 120 a of thesecond light blocking structure 120 respectively have first and secondwidths in a range of 5 μm to 20 μm, where the second width is smallerthan the first width. In this case, the focus F is located at thepinhole 120 a of the second light blocking structure 120.

FIG. 7 is a plan view of a touch sensing structure illustrated in FIG.2. FIG. 8A is an enlarged plan view of portion EA1 of FIG. 7. FIG. 8B isa sectional view taken along line I-I′ of FIG. 8A in accordance with anembodiment of the present disclosure. FIG. 8C is a sectional view takenalong line I-I′ of FIG. 8A in accordance with an embodiment of thepresent disclosure. FIG. 8D is an enlarged plan view of portion EA2 ofFIG. 8A.

Referring to FIGS. 1A to 8D, according to embodiments, the touch sensingstructure 200 is located above the electroluminescent panel 100. Inaddition, an intermediate insulation layer may be located between theencapsulation structure 150 and the touch sensing structure 200.

According to embodiments, the touch sensing structure 200 includes thesensing area SA and the non-sensing area NSA that surrounds at least apart of the sensing area SA. The sensing area SA of the touch sensingstructure 200 overlaps the display area DA of the electroluminescentpanel 100.

According to embodiments, the touch sensing structure 200 includes asensing electrode 220 a that includes a first sensing electrode 220 a_1and a second sensing electrode 220 a_2, and a bridge 240 a that includesa first bridge 240 a_1 and a second bridge 240 a_2. The sensingelectrode 220 a and the bridge 240 a are located in the sensing area SAof the touch sensing structure 200. The first sensing electrode 220 a_1and the first bridge 240 a_1 are alternately connected in a firstdirection DR1, and the second sensing electrode 220 a_2 and the secondbridge 240 a_2 are alternately connected in a second direction DR2. Thefirst bridge 240 a _1 and the second bridge 240 a_2 intersect in planview. The touch sensing structure 200 further includes a firstinsulation layer 230 and a second insulation layer 250 whoseconfigurations will be described below with reference to FIGS. 8B and8C.

According to embodiments, the first bridge 240 a_1 extends in the firstdirection DR1 and connects two neighboring first sensing electrodes 220a_1 to each other. Alternatively, the first bridge 240 a 1 extends in athird direction DR3 and connects two neighboring first sensingelectrodes 220 a 1 in the first direction DR1 to each other Furthermore,the first bridge 240 a_1 extends in a fourth direction DR4 and connectstwo neighboring first sensing electrodes 220 a_1 in the first directionDR1 to each other. Furthermore, a first portion of the first bridge 240a_1 extends in the third direction DR3 and a second portion connected tothe first portion extends in the fourth direction DR4 and connect twoneighboring first sensing electrodes 220 a_1 in the first direction DR1to each other.

According to embodiments, the second bridge 240 a_2 extends in thesecond direction DR2 and connects two neighboring second sensingelectrodes 220 a_2 in the second direction DR2 to each other.Alternatively, the second bridge 240 a_2 extends in the third directionDR3 and connects two neighboring second sensing electrodes 220 a_2 inthe second direction DR2 to each other. Alternatively, the second bridge240 a_2 extends in the fourth direction DR4 and connects two neighboringsecond sensing electrodes 220 a_2 in the second direction DR2 to eachother. Furthermore, a first portion of the second bridge 240 a_2 extendsin the third direction DR3 and a second portion connected to the firstportion extends in the fourth direction DR4 and connect two neighboringsecond sensing electrodes 220 a_2 in the second direction DR2 to eachother.

The first bridge 240 a_1 and the first sensing electrode 220 a_1 arelocated at different layers. Alternatively, the first bridge 240 a_1 isintegrated with the first sensing electrode 220 a_1. The second bridge240 a_2 is integrated with the second sensing electrode 220 a_2.Alternatively, the second bridge 240 a_2 and the second sensingelectrode 220 a_2 are located at different layers.

According to embodiments, the non-sensing area NSA of the touch sensingstructure 200 overlaps the non-display area NDA of theelectroluminescent panel 100. A pad area 260 that includes pads 260 aand a peripheral wiring 220 b that connects the sensing electrodes 220 aand the pads 260 a are located in the non-sensing area NSA of the touchsensing structure 200.

As illustrated in FIG. 7, according to embodiments, the peripheralwiring 220 b includes first peripheral wiring 220 b_1 connected to thefirst sensing electrode 220 a_1 and second peripheral wiring 220 b_2connected to the second sensing electrode 220 a_2.

As illustrated in FIG. 8D, according to embodiments, the first sensingelectrode 220 a_1 includes a conductive fine line 280 and holes H. Theconductive fine line 280 includes a first conductive fine line 280 a anda second conductive fine line 280 b.

As one example, the first sensing electrode 220 a_1 includes the firstconductive fine line 280 a extending parallel to the third directionDR3, and the second conductive fine line 280 b extending parallel to thefourth direction DR4. The first conductive fine line 280 a and thesecond conductive fine line 280 b are integrated with each other. Sincethe first sensing electrode 220 a_1 includes the first conductive fineline 280 a and the second conductive fine line 280 b, the first sensingelectrode 220 a_1 has a mesh structure with holes H formed by thecrossings of the first conductive fine lines 280 a and the secondconductive fine lines 280 b.

According to embodiments, an area where all of a lower electrode, suchas 143 of PIG. 9A, a luminous layer, such as 145 of PIG. 9A, and anupper electrode, such as 147 of FIG. 9A, overlap each other without theintervention of the insulation layer to substantially emit light isdefined as a luminous area. The hole H of the first sensing electrode220 a_1 overlaps the luminous area. Thus, even if the first sensingelectrode 220 a_1 includes a flexible opaque metal, it does not blocklight emitted from the luminous area. At least one of the second sensingelectrode 220 a_2, the first bridge 240 a_1 and/or the second bridge 240a_2 has a mesh structure with holes H while including a flexible opaquemetal, like the first sensing electrode 220 a_1.

As illustrated in FIG. 8B, according to embodiments, the first sensingelectrode 220 a_1, the second sensing electrode 220 a_2 and the secondbridge 240 a_2 are disposed on the encapsulation structure 150. Thesecond sensing electrode 220 a_2 is connected to the second bridge 240a_2 in the second direction DR2. The second sensing electrode 220 a_2 isintegrated with the second bridge 240 a_2.

According to embodiments, the first insulation layer 230 that covers thefirst sensing electrode 220 a_1, the second sensing electrode 220 a_2and the second bridge 240 a_2 is disposed on the encapsulation structure150. The first insulation layer 230 includes contact holes 270 thatexpose the first sensing electrode 220 a_1.

According to embodiments, the first bridge 240 a_1 is disposed on thefirst insulation layer 230 and fills the contact hole 270. The firstbridge 240 a_1 is connected to neighboring first sensing electrodes 220a_1. The second insulation layer 250 is disposed to cover the firstbridge 240 a_1 on the first insulation layer 230.

According to embodiments, the touch sensing structure 200 illustrated inFIG. 8B can be formed by directly performing deposition processes andetching processes on the encapsulation structure 150.

To be more specific, according to embodiments, a first metal layer isformed by performing a sputtering process on the encapsulation structure150. Thereafter, the first sensing electrode 220 a_1, the second sensingelectrode 220 a_2 and the second bridge 240 a_2 are formed by performingan etching process on the first metal layer.

Subsequently, according to embodiments, a preliminary insulation layerthat covers the first sensing electrode 220 a_1, the second sensingelectrode 220 a_2 and the second bridge 240 a_2 is formed through achemical vapor deposition (CVD) process. Thereafter, the firstinsulation layer 230 with contact holes 270 that expose the firstsensing electrode 220 a_1 is formed by performing an etching process onthe preliminary insulation layer. A second metal layer is formed byperforming a sputtering process on the first insulation layer 230,Subsequently, the first bridge 240 a_1 connected to the first sensingelectrode 220 a_1 and filling the contact hole 270 is formed byperforming an etching process on the second metal layer.

Alternatively, according to other embodiments, as illustrated in FIG.8C, the first bridge 240 a_1 is placed on the encapsulation structure150. For example, the first bridge 240 a_1 is placed directly on theencapsulation structure 150.

According to embodiments, the first insulation layer 230 that covers thefirst bridge 240 a_1 is disposed on the encapsulation structure 150. Thefirst insulation layer 230 includes contact holes 270 that expose thefirst bridge 240 a_1.

According to embodiments, the first sensing electrode 220 a_1 and thesecond bridge 240 a_2 are disposed on the first insulation layer 230.The first sensing electrode 220 a_1 fills the contact hole 270. Thesecond bridge 240 a_2 is disposed between neighboring first sensingelectrodes 220 a_1. The second insulation layer 250 is disposed on thefirst insulation layer 230 and covers the first sensing electrode 220a_1 and the second bridge 240 a_2.

According to embodiments, the touch sensing structure 200 illustrated inFIG. 8C can be formed by performing deposition processes and etchingprocesses directly on the encapsulation structure 150.

To be more specific, according to embodiments, a first metal layer isformed by performing a sputtering process directly on the encapsulationstructure 150. Thereafter, the first bridge 240 a_1 is formed byperforming an etching process on the first metal layer.

Subsequently, according to embodiments, a preliminary insulation layerthat covers the first bridge 240 a_1 is formed by a CVD process.Thereafter, the first insulation layer 230 with contact holes 270 thatexpose the first bridge 240 a_1 is formed by performing an etchingprocess on the preliminary insulation layer. A second metal layer isformed by performing a sputtering process on the first insulation layer230. Subsequently, the first sensing electrode 220 a _1, the secondsensing electrode 220 a_2, and the second bridge 240 a_2 are formed onthe first insulation layer 230 by performing an etching process on thesecond metal layer. The second sensing electrode 220 a_2 is connected tothe second bridge 240 a_2 in the second direction DR2. The secondsensing electrode 220 a_2 is integrated with the second bridge 240 a_2.

According to embodiments, the first sensing electrode 220 a_1 isconnected to the first bridge 240 a_1 by filling the contact hole 270.

As illustrated in FIG. 8A, according to embodiments, the touch sensingstructure 200 includes a repeated arrangement of unit blocks UB, whereeach unit block UB includes portions of neighboring first sensingelectrodes 220 a_1 that are adjacent in the first direction DR1, thefirst bridges 240 a_1 that connect the neighboring first sensingelectrodes 220 a_1, portions of neighboring second sensing electrodes220 a_2 that are adjacent in the second direction DR2, and the secondbridges 240 a_2 that connect the neighboring second sensing electrodes220 a_2.

FIG. 9A is a sectional view of an electroluminescent device shown inFIG. 6 in accordance with an embodiment of the present disclosure. To bemore specific, FIG. 9A illustrates five pixels located in the sensingarea of the electroluminescent device illustrated in FIGS. 1A and IB.FIG. 9B is an enlarged sectional view of portion EA3 of FIG. 9A. FIG. 9Cis an enlarged sectional view of portion F.A4 of FIG. 9A.

Referring to FIGS. 1A to FIGS. 9A and 9B. according to embodiments, theelectroluminescent device 1 includes the electroluminescent panel 100,the touch sensing structure 200, and the window 300.

According to embodiments, the electroluminescent panel 100 includes liveluminous module 100 a, the image sensor structure 160. and theprotective layer 170. The luminous module 100 a includes the transparentlayer 110, the second light blocking structure 120, the insulation layer131, the first light blocking structure 130, the electroluminescentstructure 140, and the encapsulation structure 150.

Referring to FIG. 9C, according to embodiments, the touch sensingstructure 200 has a structure described in FIG. 8B. Alternatively,according to other embodiments, the touch sensing structure 200 has astructure described in FIG. 8C.

According to embodiments, the luminous module 100 a includes a pixel P.The pixel P includes the pixel circuit PC and the electroluminescentunit ELU electrically connected to the pixel circuit PC. As illustratedin FIG. 9A, the pixel circuit PC and the electroluminescent unit ELU donot overlap each other. Alternatively, according to other embodiments,as illustrated in FIGS. 15 and 16, at least a portion of the pixelcircuit PC overlaps at least a portion of the electroluminescent unitELU.

Turning back to FIG. 9A, according to embodiments, the pixel P includesa first pixel P1, a second pixel P2, and a third pixel P3. The pixelcircuit PC includes a first pixel circuit PC1, a second pixel circuitPC2, and a third pixel circuit PC3.

According to embodiments, the electroluminescent unit ELU includes thelower electrode 143, the luminous layer 145 disposed on the lowerelectrode 143, and the upper electrode 147 disposed on the luminouslayer 145. The lower electrode 143 includes a first lower electrode 143a, a second lower electrode 143 b, and a third lower electrode 143 c.The luminous layer 145 includes a first luminous layer 145 a, a secondluminous layer 145 b, and a third luminous layer 145 c. Theelectroluminescent unit ELU can be defined in an area where the lowerelectrode 143 and the upper electrode 147 overlap each other. Theelectroluminescent unit ELU includes a first electroluminescent unitELU1, a second electroluminescent unit ELU2. and a thirdelectroluminescent unit ELU3.

To be more specific, according to embodiments, the firstelectroluminescent unit ELU1 includes a first lower electrode 143 a, afirst luminous layer 145 a disposed on the first lower electrode 143 a,and the upper electrode 147 disposed on the first luminous layer 145 a.The second electroluminescent unit ELU2 includes a second lowerelectrode 143 b, a second luminous layer 145 b disposed on the secondlower electrode 143 b. and the upper electrode 147 disposed on thesecond luminous layer 145 b. The third electroluminescent unit ELU3includes a third lower electrode 143 c, a third luminous layer 145 cdisposed on the third lower electrode 143 c, and the upper electrode 147disposed on the third luminous layer 145 c.

As illustrated in FIG. 9A, according to embodiments, the Firstelectroluminescent unit ELU1 and the first pixel circuit PC1 do notoverlap each other. Alternatively, in other embodiments, the firstelectroluminescent unit ELU1 overlaps the first pixel circuit PC1.

As illustrated in FIG. 9A, according to embodiments, the secondelectroluminescent unit ELU2 and the second pixel circuit PC2 do notoverlap each other. Alternatively, in other embodiments, the secondelectroluminescent unit ELU2 overlaps the second pixel circuit PC2.

As illustrated in FIG. 9A, according to embodiments, the thirdelectroluminescent unit HLU3 and the third pixel circuit PC3 do notoverlap each other. Alternatively, in other embodiments, the thirdelectroluminescent unit ELU3 overlaps the third pixel circuit PC3.

According to embodiments, the second light blocking structure 120includes effective pinholes 120 a and a light blocking area 120 b. Thesecond light blocking structure 120 selectively transmits the reflectedlight RL reflected by an object such as a user's finger on the firstsurface 1 a of the electroluminescent device 1 Some of the reflectedlight RL incident on the second light blocking structure 120 is blockedby the light blocking area 120 b, while at least a part of the remainingreflected light RL passes through the effective pinholes 120 a to reachthe image sensor structure 160 located under the second light blockingstructure 120.

According to embodiments, the image sensor structure 160 includeseffective image sensors 160 a and dummy image sensors 160 b, which aredistributed at regular intervals to have a predetermined density. Theeffective image sensors 160 a are used to sense an image on the firstsurface 1 a, while the dummy image sensors 160 b are not used to sensethe image on the first surface 1 a.

According to embodiments, the effective image sensor 160 a has the samestructure as the dummy image sensor 160 b. As one example, an uppersurface of the effective image sensor 160 a senses an image, and anupper surface of the dummy image sensor 160 b can likewise sense animage. As another example, upper and lower surfaces of the effectiveimage sensor 160 a can sense an image, and upper and lower surfaces ofthe dummy image sensor 160 bcan likewise sense an image.

Alternatively, in other embodiments, the effective image sensor 160 ahas a structure that differs from that of the dummy image sensor 160 b.As one example, only the upper surface of the effective image sensor 160a can sense an image, while only the lower surface of the dummy imagesensor 160 b can sense an image. As another example, only the uppersurface of the effective image sensor 160 a can sense an image, but boththe upper and lower surfaces of the dummy image sensor 160 b can sensean image. As another example, both the upper and lower surfaces of theeffective image sensor 160 a can sense an image, but only the lowersurface of the dummy image sensor 160 b can sense an image.

According to embodiments, the effective image sensor 160 a of the imagesensor structure 160 is configured such that at least the upper surfacecan sense an image, and outputs as a sensing signal an electrical signalcorresponding to the reflected light RL received by the upper surfacethrough the effective pinholes 120 a. The effective image sensor 160 aoverlaps the effective pinhole 120 a of the second light blockingstructure 120. The dummy image sensor 160 b overlaps the light blockingarea 120 b of the second light blocking structure 120 withoutoverlapping the effective pinhole 120 a of the second light blockingstructure 120.

According to embodiments, the insulation layer 131 is disposed on thesecond light blocking structure 120. The insulation layer 131 includesan inorganic insulator such as a silicon nitride, a silicon oxide or asilicon oxynitride to prevent impurities from the transparent layer 110from penetrating into the electroluminescent unit ELU. However, in otherembodiments, the insulation layer 131 includes an organic insulatingmaterial. The insulation layer 131 may have a single-layered structureor a multi-layered structure.

According to embodiments, the first light blocking structure 130 isdisposed on the insulation layer 131. The first light blocking structure130 includes the effective pinholes 130 a that contribute to sensing animage, and the dummy pinholes 130 b that do not contribute to sensing animage. The first light blocking structure 130 includes at least oneinsulation layer and at least one conductive layer. To be more specific,the first light blocking structure 130 includes a first conductivepattern 137 a and a first dummy conductive pattern 138 a that arelocated on the insulation layer 131, a gate insulation layer 132 thatcovers the first conductive pattern 137 a and the first dummy conductivepattern 138 a and is located on the insulation layer 131, a secondconductive pattern 137 b and a second dummy conductive pattern 138 bthat are located on the gate insulation layer 132, a first interlayerinsulation layer 133 that covers the second conductive pattern 137 b andthe second dummy conductive pattern 138 b and is located on the gateinsulation layer 132, a third conductive pattern 137 c and a third dummyconductive pattern 138 c that are located on the first interlayerinsulation layer 133, a second interlayer insulation layer 134 thatcovers the third conductive pattern 137 c and the third dummy conductivepattern 138 c and that is located on the first interlayer insulationlayer 133, a fourth conductive pattern 137 d and a fourth dummyconductive pattern 138 d that are located on the second interlayerinsulation layer 134, a third interlayer insulation layer 135 thatcovers the fourth conductive pattern 137 d and the fourth dummyconductive pattern 138 d and that is located on the second interlayerinsulation layer 134, and a fifth conductive pattern 137 e and a fifthdummy conductive pattern 138 e that are located on the third interlayerinsulation layer 135.

According to embodiments, the first conductive patterns 137 a can lieany one of a seventh source electrode SE7, a first drain electrode DE1,a 3b-th active pattern ACT3 b, a 3b-th drain electrode DE3 b, a 4b-thdrain electrode DE4 b, and a 4a-th drain electrode DE4 a, which areshown in FIG. 23. The second conductive patterns 137 b can be any one ofa i+1-th scan line Si+1, an i-th emission control line Ei, an i-th scanline Si, and an i−1-th scan line Si−1, which are shown in FIG. 23. Thethird conductive patterns 137 c can be any one of an initializationpower line IPL and a capacitor upper electrode UE, which are shown inFIG. 23. The fourth conductive patterns 137 d can be any one of a pixelpower line PL, a first connection line CNL1, and a second connectionline CNL2, which are shown in FIG. 23. The fifth conductive patients 137e may be a connection patient CNP shown in FIG. 23.

According to embodiments, the first dummy conductive patterns 138 a canbe any one of a seventh source electrode SE7, a first drain electrodeDE1, a 3b-th active pattern ACT3 b, a 3b-th drain electrode DE3 b, a4b-th drain electrode DE4 b, and a 4a-th drain electrode DE4 a, whichare shown in FIG. 23. The second dummy conductive patterns 138 b can beany one of a i+1-th scan line Si+1, an i-th emission control line Ei. ani-th scan line Si, and an i−1-th scan line Si−1, which are shown in FIG.23. The third dummy conductive patterns 138 c can be any one of aninitialization power line IPL and a capacitor upper electrode UE, whichare shown in FIG. 23. The fourth dummy conductive patterns 138 d can beany one of a first connection line CNL1, a second connection line CNL2,and a pixel power line PL, which are shown in FIG. 23. The fifth dummyconductive patterns 138 e can be a connection pattern CNP shown in FIG.23.

According to embodiments, at least two of the first conductive pattern137 a, the second conductive pattern 137 b, the third conductive pattern137 c, the fourth conductive pattern 137 d. and the fifth conductivepattern 137 e define the effective pinholes 130 a of the first lightblocking structure 130 in plan view. The effective pinholes 130 a of thefirst light blocking structure 130 overlap the effective pinholes 120 aof the second light blocking structure 120.

According to embodiments, at least two of the first dummy conductivepattern 138 a, the second dummy conductive pattern 138 b, the thirddummy conductive pattern 138 c, the fourth dummy conductive pattern 138d, and the fifth dummy conductive pattern 138 e define the dummypinholes 130 b of the first light blocking structure 130 in plan view.The dummy pinholes 130 b of the first light blocking structure 130overlap the light blocking area 120 b of the second light blockingstructure 120 without overlapping the effective pinholes 120 a of thesecond light blocking structure 120.

According to embodiments, the effective pinholes 130 a of the firstlight blocking structure 130 may form a grid arrangement in plan view.Furthermore, the effective pinholes 130 a and the dummy pinholes 130 bof the first light blocking structure 130 may form a single gridarrangement in plan view.

According to embodiments, at least some of the reflected light RLpropagates into an area between the effective pinholes 130 a of thefirst light blocking structure 130, an area between the dummy pinholes130 b of the first light blocking structure 130, and an area between theeffective pinholes 130 a and the dummy pinholes 130 b of the first lightblocking structure 130. However, the at least some of the reflectedlight RL is blocked by the light blocking area 120 b of the second lightblocking structure 120.

According to embodiments, the fifth interlayer insulation layer 136 isdisposed on the third interlayer insulation layer 135 and covers thefifth conductive patterns 137 e and the fifth dummy conductive patterns138 e.

According to embodiments, the electroluminescent structure 140 includesa first electroluminescent unit ELU1, a second electroluminescent unitELU2, and a third electroluminescent unit ELU3 and is disposed on thefifth interlayer insulation layer 136.

According to embodiments, the lower electrodes 143 are disposed on thefifth interlayer insulation layer 136. The lower electrodes 143 arereflective individual electrodes, while the upper electrode 147 is atransparent or translucent common electrode. Alternatively, in otherembodiments, the lower electrodes 143 are transparent or translucentindividual electrodes, while the upper electrode 147 is a reflectivecommon electrode.

According to embodiments, two neighboring lower electrodes 143 arespaced apart from each other by a third distance I_3. As illustrated inFIG. 9A, the first lower electrode 143 a and the second lower electrode143 b are spaced apart from each other by the third distance I_3.

According to embodiments, the effective pinholes 130 a of the firstlight blocking structure 130 are located in the second pixel circuitPC2, and do not overlap the lower electrode 143. To be more specific,the effective pinholes 130 a of the first light blocking structure 130do not overlap the second lower electrode 143 b of the secondelectroluminescent unit ELU2.

According to embodiments, the dummy pinholes 130 b of the first lightblocking structure 130 are located in the third pixel circuit PC3, anddo not overlap the lower electrode 143. To be more specific, the dummypinholes 130 b of the first light blocking structure 130 located in thethird pixel circuit PC3 do not overlap the first, second and third lowerelectrodes 143 a, 143 b and 143 c included in the first, second andthird electroluminescent units ELU1, ELU2 and ELU3, respectively.

Alternatively, in other embodiments, the dummy pinholes 130 b of thefirst light blocking structure 130 overlap the lower electrode 143. Inthis case, tire lower electrode 143 blocks the reflected light RLincident on the dummy pinholes 130 b of the first light blockingstructure 130. Thus, the image sensor structure 160 can detect arelatively clear image.

As illustrated in FIG. 9A, according to embodiments, the optical centerof the effective pinhole 130 a located in the second pixel circuit PC2of the second pixel P2 is spaced apart from the first lower electrode143 a in the fifth direction DR5 by a first distance D1, and the opticalcenter of the effective pinhole 130 a located in the second pixelcircuit PC2 of the second pixel P2 is spaced apart from the second lowerelectrode 143 b in the sixth direction DR6 by a third distance D3. Thefirst distance D1 is equal to the third distance D3. Here, the opticalcenter of the effective pinhole 130 a is a point where a vertical linepassing through the focus F intersects a plane of a central portion ofthe effective pinhole 130 a. If the focus F is formed in the effectivepinhole 130 a, the optical center of the effective pinhole 130 a becomesthe focus F.

As illustrated in FIG. 9A, according to embodiments, the optical centerof the effective pinhole 130 a is spaced apart from an inner wall ed ofthe effective pinhole 130 a in the fifth direction DR5 by a seconddistance D2 and in the sixth direction DR6 by a fourth distance D4. Thesecond distance D2 is equal to the fourth distance D4. The seconddistance D2 is less than the first distance D1. The fourth distance D4is less than the third distance D3.

According to embodiments, the electroluminescent structure 140 includesa pixel defining layer 141 and spacers 142. The pixel defining layer 141is disposed on the fifth interlayer insulation layer 136 and covers anedge of the lower electrode 143. The spacers 142 are disposed on thepixel defining layer 141. The spacers 142 are higher than the pixeldefining layer 141. To be more specific, the upper surface of the spacer142 is higher than the upper surface of the pixel defining layer 141.The spacer 142 includes a same material as the pixel defining layer 141,and is integrated with the pixel defining layer 141. Two neighboringspacers 142 are spaced apart from each other by a sixth distance I_6.

According to embodiments, the electroluminescent unit ELU furtherincludes a first function layer 144 disposed between the lower electrode143 and the luminous layer 145. The first function layer 144 is a commonlayer. In this case, the first function layer 144 is located above thelower electrode 143, the pixel defining layer 141 and the spacer 142.

According to embodiments, when the lower electrode 143 is an anode, thefirst function layer 144 may lie a hole injection layer (HIL), a holetransporting layer (HTL) or a multi-layered structure having a HIL and aHTL located on the HIL.

According to embodiments, the luminous layer 145 is an individual layer.The luminous layer 145 may include an organic electroluminescentmaterial or an inorganic electroluminescent material. The first luminouslayer 145 a, the second luminous layer 145 b, and the third luminouslayer 145 c emit red, green and blue light, respectively. Alternatively,in other embodiments, the first luminous layer 145 a, the secondluminous layer 145 b, and the third luminous layer 145 c emit magenta,cyan, and yellow light, respectively.

According to embodiments, at least two neighboring layers of the firstluminous layer 145 a, the second luminous layer 145 b, and the thirdluminous layer 145 c overlap a portion PT of the pixel defining layer141 where no spacers 142 are located. For example, as illustrated inFIG. 9B, the first luminous layer 145 a and the second luminous layer145 b overlap a portion PT of the pixel defining layer 141 where nospacer 142 is located. An overlap area L of the first luminous layer 145a and the second luminous layer 145 b overlaps the effective pinhole 130a of the first light blocking structure 130. Therefore, the distancebetween the first electroluminescent unit ELU1, the secondelectroluminescent unit ELU2, and the third electroluminescent unit ELU3is reduced to achieve a higher resolution and to reduce the scatteringof reflected light RL by the spacer 142, thus obtaining a clearerfingerprint image.

According to embodiments, the electroluminescent unit ELU furtherincludes a second function layer 146 disposed between the luminous layer145 and the upper electrode 147. The second function layer 146 is acommon layer. When the upper electrode 147 is a cathode, the secondfunction layer 146 may be an electron injection layer (EIL), an electrontransporting layer (ETL) or a multi-layered structure having an EIL andan ETL located on the EIL.

According to embodiments, the electroluminescent unit ELU includes theupper electrode 147 disposed on the second function layer 146. The upperelectrode 147 is a cathode. The upper electrode 147 is a commonelectrode.

According to embodiments, the encapsulation structure 150 is disposed onthe upper electrode 147 and covers the upper electrode 147. Theencapsulation structure 150 includes a first inorganic layer, an organiclayer on the first inorganic layer, and a second inorganic layer on theorganic layer. Alternatively, in other embodiments, the encapsulationstructure 150 is a glass layer.

As illustrated in FIG. 9A, according to embodiments, the optical centerof the effective pinhole 130 a located in the second pixel circuit PC2of the second pixel P2 is spaced apart from the spacer 142 in the fifthdirection DR5 by a fifth distance D5 and in the sixth direction DR6 by aseventh distance D7. The fifth distance D5 is equal to the seventhdistance D7. The fifth distance D5 is greater than the first distanceDl. The seventh distance D7 is greater than the third distance D3.

According to embodiments, when the effective pinholes 130 a of the firstlight blocking structure 130 and the spacer 142 overlap each other, thereflected light RL is absorbed or scattered by the spacer 142 prior tobeing incident on the effective pinholes 130 a, which diminishes theintensity of the reflected light RL and reduces the sharpness of thefingerprint due to the diminished reflected light RL. Therefore, thespacers 142 are disposed on the pixel defining layer 141 withoutoverlapping the effective pinholes 130 a, so that a relatively clearfingerprint image can be obtained.

Alternatively, in other embodiments, if the spacer 142 has a circular orcurved edge when viewed in a plane and has a curved edge between upperand side surfaces when viewed in a cross-section, so that the spacer 142serves as a condensing lens, the spacer 142 overlaps the effectivepinholes 130 a of the first light blocking structure 130. Since thespacer 142 serves as the condensing lens, the intensity of the reflectedlight RL is increased, so that it is possible to obtain a clearerfingerprint image Furthermore, since no luminous material is applied tothe upper surface of the spacer 142, it is possible to obtain a clearerfingerprint image.

According to embodiments, the bridge 240 a of the touch sensingstructure 200 does not overlap the effective pinhole 130 a of the firstlight blocking structure 130. When the bridge 240 a overlaps theeffective pinhole 130 a, the reflected light RL incident on theeffective pinhole 130 a is absorbed or reflected to be diminished by thebridge 240 a. The diminished reflected light RL reduces the sharpness ofthe fingerprint. Therefore, the bridge 240 a is disposed to not overlapthe effective pinhole 130 a, thus preventing a reduction in theintensity of the reflected light RL incident on the effective pinhole130 a.

According to embodiments, two neighboring bridges 240 a in a horizontaldirection may be spaced apart from each other in the fifth direction DR5by a seventh distance I_7. Here, the seventh distance I_7 is greaterthan the sixth distance I_6.

As illustrated in FIG. 9A, according to embodiments, the optical centerof the effective pinhole 130 a of the first light blocking structure 130located in the second pixel circuit PC2 of the second pixel P2 is spacedapart from the bridge 240 a adjacent to the optical center in the fifthdirection DR5 by a ninth distance D9 and in the sixth direction DR6 byan eleventh distance D11. The ninth distance D9 is equal to the eleventhdistance D11. The ninth distance D9 is greater than the fifth distanceD5. The eleventh distance D11 is greater than the seventh distance D7.

According to embodiments, the first light blocking structure 130includes the dummy pinhole 130 b. The dummy pinhole 130 b overlaps thelight blocking area 120 b of the second light blocking structure 120.The dummy pinhole 130 b overlaps the dummy image sensor 160 b. Reflectedlight RL passing through the dummy pinhole 130 b is blocked by the lightblocking area 120 b of the second light blocking structure 120.Therefore, the reflected light RL does not reach the dummy image sensor160 b.

According to embodiments, the size of the dummy pinhole 130 b is equalto that of the effective pinhole 130 a. In this case, since the pixelcircuit PC in which tire effective pinhole 130 a is formed and the pixelcircuit PC in which the dummy pinhole 130 b is located are equivalentlydesigned, formation uniformity between the pixel circuits PC can beincreased.

Alternatively, in other embodiments, the size of the dummy pinhole 130 bis greater than that of the effective pinhole 130 a. The dummy pinhole130 b is used as a passage to remove gas or impurities that may remainin the pixel circuit structure 130 after forming the pixel circuitstructure 130 to reduce defects that can occur when the gas or theimpurities are collected in one place. When the size of the dummypinhole 130 b is larger than that of the effective pinhole 130 a, thegas or the impurities can be more smoothly removed.

Furthermore, according to still other embodiments, the size of the dummypinhole 130 b is less than that of the effective pinhole 130 a, or nodummy pinhole 130 b is formed. Some reflected light RL passing throughthe dummy pinhole 130 b may propagate to the effective pinhole 120 a,and pass through the effective pinhole 120 a. Thereby, this is detectedas noise by the effective image sensor 160 a. In this case, an unclearfingerprint image is obtained. Therefore, the size of the dummy pinhole130 b is less than that of the effective pinhole 130 a, or no dummypinhole 130 b is formed, thus reducing noise.

The dummy pinhole 130 b may not overlap the spacer 142 and the bridge240 a. Alternatively, according to embodiments, the dummy pinhole 130 boverlaps at least one of the spacer 142 and/or the bridge 240 a. In thiscase, reflected light RL incident on the dummy pinhole 130 b can bereduced.

According to embodiments, an intermediate layer 180 is disposed on theimage sensor structure 160. The intermediate layer 180 attaches theimage sensor structure 160 to the transparent layer 110. For example,the intermediate layer 180 is an optical clear adhesive (OCA).

According to embodiments, a predetermined voltage is applied to thelight blocking area 120 b of the second light blocking structure 120.

When the second light blocking structure 120 is in an electricallyfloating state, the voltage of the second light blocking structure 120changes according to external influences, thus electricallyunpredictably affecting the transistor and the capacitor in the pixelcircuit PC. Thus, according to embodiments, the second light blockingstructure 120 has a ground state with one of a predetermined positivevoltage, a predetermined negative voltage and a predetermined 0V. Thatis, the second light blocking structure 120 is electrically biasedFurthermore, when the second light blocking structure 120 has a groundstate, the second light blocking structure 120 is connected to at leastone electric conductor in the electroluminescent device 1 to be used asa static-electricity receiving member that discharges any staticelectricity accumulates in the electric conductor.

According to embodiments, a part of the inner wall ed of the effectivepinhole 130 a of the first light blocking structure 130 is defined by apart of an outer wall of the lower electrode 143. In this case, the partof the inner wall ed of the effective pinhole 130 a of the first lightblocking structure 130 and the part of the outer wall of the lowerelectrode 143 vertically correspond to each other. This will bedescribed in detail with reference to FIG. 24.

FIG. 10 is a sectional view of an electroluminescent device shown inFIG. 6 in accordance with an embodiment of the present disclosure. Thedescription of components that are already described in FIGS. 1A to 9Cwill be omitted herein.

Referring to FIGS. 1A to 10, according to embodiments, the second lightblocking structure 120 has an additional pinhole 120 c, and the firstlight blocking structure 130 includes a light blocking member 139(hereinafter, also referred as a lower light blocking member 139).

According to embodiments, the additional pinhole 120 c is used as apassage to remove gas or impurities to reduce defects that may occurwhen the gas or impurities are collected in one place. Furthermore, theadditional pinhole 120 c increase a surface area of the second lightblocking structure 120 to increase an adhesive force between theinsulation layer 131 and the second light blocking structure 120.

According to embodiments, the additional pinhole 120 c is the same sizeas the effective pinhole 120 a. When the additional pinhole 120 c is thesame size as the effective pinhole 120 a, holes of a mask used to formthe first light blocking structure 130 can be uniformly formed, whichsimplifies a fabrication process.

Alternatively, in other embodiments, the additional pinhole 120 c has asize that is greater than that of the effective pinhole 120 a. In thiscase, the additional pinhole 120 c can more effectively remove the gasor impurities.

Alternatively, in other embodiments, the additional pinhole 120 c has asize that is less than that of the effective pinhole 120 a. When theadditional pinhole 120 c is smaller than the effective pinhole 120 a,the intensity of the reflected light RL that passes through theadditional pinhole 120 c is diminished. Thus, noise generated by thereflected light RL passing through the additional pinhole 120 c can bereduced.

According to embodiments, the additional pinhole 120 c overlaps thelower electrode 143. Therefore, the lower electrode 143 reduces theintensity of the reflected light RL reflected towards the additionalpinhole 120 c. As one example, the additional pinhole 120 c located inthe first pixel P1 overlaps the first lower electrode 143 a. As anotherexample, the additional pinhole 120 c located in the third pixel P3overlaps the third lower electrode 143 c.

According to embodiments, the first light blocking structure 130includes the light blocking member 139. The light blocking member 139overlaps the additional pinhole 120 c and the first lower electrode 143a. Therefore, the light blocking member 139 reduces the intensity of thereflected light RL reflected towards the additional pinhole 120 c. Thus,noise generated by the reflected light RL passing through the additionalpinhole 120 c can be reduced.

According to embodiments, the light blocking member 139 has a sizegreater than that of the additional pinhole 120 c. Therefore, the lightblocking member 139 effectively reduces the intensity of the reflectedlight RL incident on the additional pinhole 120 c.

According to embodiments, the light shielding member 139 is disposed onat least one of a first layer on which the first conductive pattern 137a is disposed, a second layer on which the second conductive pattern 137b is disposed, a third layer on which the third conductive pattern 137 cis disposed, a fourth layer on which the fourth conductive pattern 137 dis disposed and/or a fifth layer on which the fifth conductive pattern137 e is disposed.

As one example, according to embodiments, the light blocking member 139has a single-layered structure. As another example, tire light blockingmember 139 has a multi-layered structure that includes a first lightblocking layer, an insulation layer on the first light blocking layer,and a second light blocking layer on the insulation layer.

As illustrated in FIG. 10, according to embodiments, the light blockingmember 139 is located above the second light blocking structure 120.Alternatively, in other embodiments, the light blocking member 139 islocated under the second light blocking structure 120. In this case, thelight blocking member 139 is located at least between the effectiveimage sensor 160 a and the additional pinhole 120 c to block thereflected light RL that passes through the additional pinhole 120 c frompropagating towards the effective image sensor 160 a.

FIG. 11 is a sectional view of an electroluminescent device shown inFIG. 6 in accordance with an embodiment of the present disclosure. Thedescription of components that are already described in FIGS. 1A to 10will be omitted herein.

Referring to FIGS. 1A to 11, according to embodiments, a third lightblocking structure 190 is located under the intermediate layer 180 andbetween the image sensor structure 160 and the protective layer 170.

According to embodiments, the third light blocking structure 190prevents light incident on the second surface 1 b of theelectroluminescent device 1 from propagating towards the image sensorstructure 160. The third light blocking structure 190 includes a lightblocking material. The light blocking material may be a reflectingmaterial or a light absorbing material.

In addition, at least one intermediate layer may be located between thethird light blocking structure 190 and the image sensor structure 160.The intermediate layer includes a transparent insulating material.

FIG. 12 is a sectional view of an electroluminescent device shown inFIG. 6 in accordance with an embodiment of the present disclosure. Thedescription of components that are already described in FIGS. 1A to 11will be omitted herein.

Referring to FIGS. 1A to 12, according to embodiments, the third lightblocking structure 190 has an effective pinhole 190 a and a dummypinhole 190 b. The effective pinhole 190 a overlaps the dummy imagesensor 160 b of the image sensor structure 160 and the spacer 142 on thepixel defining layer 141 of the electroluminescent structure 140, butdoes not overlap the effective image sensor 160 a.

According to embodiments, the effective pinhole 190 a is filled with atransparent insulation layer 190 a_1. The transparent insulation layer190 a_1 includes an organic material.

According to embodiments, a portion of the light incident on the secondsurface lb of the electroluminescent device 1 is blocked by the thirdlight blocking structure 190, while a portion of the remaining lightreaches the dummy image sensor 160 b through the effective pinhole 190a. Of the upper and lower surfaces of the dummy image sensor 160 b, atleast the lower surface is configured to perform a light sensingfunction, thus detecting a user's fingerprint, etc., on the secondsurface lb. Here, when the optical recognition sensitivity of the dummyimage sensor 160 b is relatively high, the dummy image sensors 160 bfunction as a camera that photographs an object that is spaced apartfrom the second surface 1 b.

In addition, at least one intermediate layer is located between thethird light blocking structure 190 and the image sensor structure 160.The intermediate layer includes a transparent insulating material. Inthis case, the transparent insulation layer 190 a_1 is a part of theintermediate layer.

According to embodiments, the effective pinhole 190 a is the same sizeas the dummy image sensor 160 b, or is larger in size than the dummyimage sensor 160 b. In this case, it is possible to prevent a reductionof the intensity of light that passes through the effective pinhole 190a and is incident on the dummy image sensor 160 b.

Alternatively, in other embodiments, the effective pinholes 190 a aresmaller in size than the dummy image sensor 160 b. In this case, theintensity of noise light that passes through the effective pinhole 190 aand, then, sensed by the effective image sensor 160 a can be reduced.

According to embodiments, the dummy pinhole 190 b of the third lightblocking structure 190 is located between neighboring effective pinholes190 a. Gas or impurities remaining in the electroluminescent device 1can be discharged from the electroluminescent device 1 through the dummypinhole 190 b of the third light blocking structure 190. Furthermore,the dummy pinhole 190 b increases the surface area of the third lightblocking structure 190 which increases an adhesive force between theintermediate layer 180 and the third light blocking structure 190.

According to embodiments, the dummy pinhole 190 b does not overlap theeffective image sensor 160 a. Therefore, light passing through the dummypinhole 190 b from the second surface 1 b is prevented from propagatingto the effective image sensor 160 a and acting as noise.

Alternatively, in other embodiments, the dummy pinhole 190 b overlapsthe effective image sensor 160 a. In this case, the lower surface of theeffective image sensor 160 a is configured to not sense light.Therefore, a case where the light passing through the dummy pinhole 190b from the second surface 1 b propagates to the effective image sensor160 a to act as noise can be minimized.

According to embodiments, the dummy pinhole 190 b of the third lightblocking structure 190 is smaller in size than tire effective pinhole190 a. In this case, light incident through the dummy pinhole 190 b canbe prevented from propagating to the dummy image sensor 160 b or theeffective image sensor 160 a and acting as noise

In addition, a light blocking member is located between the dummypinhole 190 b and the dummy image sensor 160 b or between the dummypinhole 190 b and the effective image sensor 160 a. The light blockingmember prevents light passing through the dummy pinhole 190 b frompropagating to the dummy image sensor 160 b or the effective imagesensor 160 a and acting as noise.

FIG. 13 is a sectional view of an electroluminescent device shown inFIG. 6 in accordance with an embodiment of the present disclosure. Thedescription of components that are already described in FIGS. 1A to 12will be omitted herein.

Referring to FIGS. 1A to 13, according to embodiments, the sensingelectrode 220 a includes an opening 220 c. For example, as illustratedin FIG. 13, a first sensing electrode 220 a_1 includes an opening 220 c.The opening 220 c overlaps the effective pinhole 130 a. As one example,one opening 220 c vertically corresponds to the effective pinhole 130 aand overlaps the effective pinhole 130 a. As another example, at leasttwo neighboring openings 220 c vertically correspond to one effectivepinhole 130 a and overlap one effective pinhole 130 a.

According to embodiments, a width of the opening 220 c is equal to orgreater than a width RLW of the reflected light RL measured by thesensing electrode 220 a. For example, as illustrated in FIG, 13, whenthe focus F is located at the effective pinhole 130 a of the first lightblocking structure 130, the width of the opening 220 c is greater thanthe width of the effective pinhole 130 a. Therefore, it is possible toprevent the reflected light RL from being absorbed or reflected by thesensing electrode 220 a, thus preventing reduction of the intensity ofthe reflected light RL.

According to embodiments, when the bridge 240 a is relatively large, thebridge 240 a also includes an effective pinhole that overlaps theeffective pinhole 130 a. Therefore, it is possible to prevent thereflected light RL from being absorbed or reflected by the bridge 240 a,thus preventing reduction of the intensity of the reflected light RL.

According to embodiments, the opening 220 c is larger than the hole H ofthe sensing electrode 220 a shown in FIG. 9A. The sensing electrode 220a includes both the hole H shown in FIG. 9A and the opening 220 c shownin FIG. 13. The bridge 240 a also includes both the hole H shown in FIG.9A and the opening 220 c shown in FIG. 13.

FIG. 14 is a sectional view of an electroluminescent device shown inFIG. 6 in accordance with an embodiment of the present disclosure. Thedescription of components that are already described in FIGS. 1A to 13will be omitted herein.

Referring to FIGS. 1A to 14. according to embodiments, theelectroluminescent device 1 includes fourth light blocking structures148 located between the fifth interlayer insulation layer 136 and thepixel defining layer 141. For example, the fourth light blockingstructure 148 is disposed on the same layer as the lower electrode 143.The fourth light blocking structures 148 have island shapes that do notsurround the lower electrode 143.

According to embodiments, the fourth light blocking structure 148includes at least one of an effective pinhole 148 a and/or a dummypinhole 148 b.

According to embodiments, the effective pinhole 148 a of rite fourthlight blocking structure 148, the effective pinhole 130 a of the firstlight blocking structure 130, the effective pinhole 120 a of the secondlight blocking structure 120, and rite effective image sensor 160 aoverlap each other. Therefore, the reflected fight RL can sequentiallypass through the effective pinhole 148 a, the effective pinhole 130 a,and the effective pinhole 120 a to be incident on the effective imagesensor 160 a.

According to embodiments, the dummy pinhole 148 b of the fourth lightblocking structure 148, the dummy pinhole 130 b of the first lightblocking structure 130, the light blocking area 120 b of the secondlight blocking structure 120, and the dummy image sensor 160 b overlapeach other. Therefore, after the reflected light RL sequentially passesthrough the dummy pinhole 148 b and the dummy pinhole 130 b, thereflected light RL may be blocked by the light blocking area 120 b andis not incident on the dummy image sensor 160 b.

According to embodiments, the dummy pinhole 148 b of the fourth lightblocking structure 148 overlaps the spacer 142 on the pixel defininglayer 141 of the electroluminescent structure 140. Therefore, after thereflected light RL is absorbed or scattered by the spacer 142 and theintensity of the reflected light RL is reduced, the reflected light RLis incident on the dummy pinhole 148 b.

According to embodiments, rite dummy pinhole 148 b of the fourth lightblocking structure 148 has the same size as the effective pinhole 148 a.In this case, holes of a mask used to form the fourth light blockingstructure 148 can be uniformly formed, which simplifies a fabricationprocess.

Alternatively, in other embodiments, the dummy pinhole 148 b of thefourth light blocking structure 148 is larger titan the effectivepinhole 148 a. The dummy pinhole 148 b is used as a passage to removegas or impurities that remain in the electroluminescent device 1 toreduce defects that can occur when the gas or the impurities arecollected in one place. When the size of the dummy pinhole 130 b islarger than that of the effective pinhole 148 a, the gas or theimpurities can be more effectively removed.

Alternatively, in still other embodiments, the dummy pinhole 148 b ofthe fourth light blocking structure 148 is smaller than the effectivepinhole 148 a. After the reflected light RL that passes through thedummy pinhole 148 b passes through the dummy pinhole 130 b, most of thereflected light RL is blocked by the second light blocking structure120. However, some of the reflected light RL may propagate through theeffective pinhole 120 a of the second light blocking structure 120, thusacting as noise. Therefore, the dummy pinhole 148 b of the fourth lightblocking structure 148 can be formed smaller than the effective pinhole148 a to reduce noise.

According to embodiments, the fourth light blocking structure 148 is notelectrically connected to the lower electrode 143. As one example, thefourth light blocking structure 148 is electrically floated. As anotherexample, a positive voltage, a negative voltage or a zero voltage isconstantly applied to the fourth light blocking structure 148. This canprevent the occurrence of cross talk due to voltage fluctuations of thefourth light blocking structure 148.

According to embodiments, the focus of the reflected light RL is on theeffective pinhole 148 a of the fourth light blocking structure 148. Inthis case, a ninth distance I_9 is greater than an eighth distance I_8,a seventh distance I_7 is greater than the ninth distance I_9, a fourthdistance I_4 is greater than the eighth distance I_8, and a fifthdistance I_5 is greater than the fourth distance I_4.

According to other embodiments, the focus of the reflected light RL ison the effective pinhole 130 a of the first light blocking structure130. In this case, the eighth distance I_8 is greater than the fourthdistance I_4, the ninth distance I_9 is greater than the eighth distanceI_8, the seventh distance I_7 is greater larger than the ninth distanceI_9, and the fifth distance I_5 is greater than the fourth distance I_4.

According to still other embodiments, the focus of the reflected lightRL is on the effective pinhole 120 a of the second light blockingstructure 120. In this case, the fourth distance I_4 is greater than thefifth distance I_5, the eighth distance I_8 is greater than the fourthdistance I_4, the ninth distance I_9 is greater than the eighth distanceI_8, and the seventh distance I_7 is greater than the ninth distanceI_9.

According to embodiments, an upper light blocking member is locatedabove the dummy pinhole 148 b of the fourth light blocking structure148. The upper light blocking member prevents the reflected light RLfront being incident on the dummy pinhole 148 b. The upper lightblocking member is wider than the dummy pinhole 148 b.

According to embodiments, a lower light blocking member is located underthe dummy pinhole 148 b of the fourth light blocking structure 148. Thelower light blocking member blocks the reflected light RL that haspasses through the dummy pinhole 148 b. The lower light blocking memberis wider than the dummy pinhole 148 b. The lower light blocking memberincludes at least a part of a light blocking layer in the first lightblocking structure 130.

According to embodiments, the light blocking layer is a conductivelayer. For instance, the light blocking layer includes an opaque metal.Alternatively, in other embodiments, the light blocking layer is aninsulation layer. For instance, the light blocking layer includes ablack matrix material.

If the fourth light blocking structure 148 is in an electricallyfloating state, the voltage of the fourth light blocking structure 148changes according to external influences, thus electricallyunpredictably affecting the transistor and the capacitor in the pixelcircuit PC. Thus, according to embodiments, the fourth light blockingstructure 148 has a ground state with one of a predetermined positivevoltage, a predetermined negative voltage and a predetermined OV. Thatis, the fourth light blocking structure 148 is electrically biased. Thefourth light blocking structure 148 is electrically connected to theupper electrode 147.

FIG. 15 is a sectional view of an electroluminescent device shown inFIG. 6 in accordance with an embodiment of the present disclosure. Thedescription of components that are already described in FIGS. 1A to 14will be omitted herein.

Referring to FIGS. 1A to 15, according to embodiments, theelectroluminescent structure 140 includes the fourth light blockingstructure 148 that has at least one of the effective pinhole 148 aand/or the dummy pinhole 148 b.

According to embodiments, the fourth light blocking structure 148 isintegrated with the lower electrode 143. As one example, the fourthlight blocking structure 148 with effective pinhole 148 a in the secondpixel circuit PC2 of the second pixel P2 is integrated with a secondlower electrode 143 b. As another example, the fourth light blockingstructure 148 with dummy pinhole 148 b in the third pixel circuit PC3 ofthe third pixel P3 is integrated with a third lower electrode 143 c.

According to embodiments, since the effective pinhole 148 a and thedummy pinhole 148 b shown in FIG. 15 are substantially the same as theeffective pinhole 148 a and the dummy pinhole 148 b already described inFIG. 14, a detailed description thereof will be omitted herein.

According to embodiments, since the upper light blocking member and thelower light blocking member of FIG. 15 are substantially the same as theupper light blocking member and the lower light blocking member alreadydescribed with respect to FIG. 14, a detailed description thereof willbe omitted herein.

According to embodiments, since the relationships between the ninthdistance I_9, the fourth distance I_4, the fifth distance I_5, theeighth distance I_8, and the seventh distance I_7 shown in FIG. 15 aresubstantially equal to the relationships between the ninth distance I_9,the fourth distance I_4, the fifth distance I_5, the eighth distanceI_8, and the seventh distance I_7 that have been already described inFIG. 14, the description thereof will be omitted herein.

FIG. 16 is a sectional view of an electroluminescent device shown inFIG. 6 in accordance with an embodiment of the present disclosure. Thedescription of components that are already described in FIGS. 1A to 15will be omitted herein.

Referring to FIGS. 1A to 16, the electroluminescent structure 140includes the fourth light blocking structure 148 having at least one ofthe effective pinhole 148 a and/or the dummy pinhole 148 b.

As one example, the fourth light blocking structure 148 with theeffective pinhole 148 a located in the second pixel circuit PC2 of thesecond pixel P2 is integrated with the first lower electrode 143 a. Asanother example, the fourth light blocking structure 148 with the dummypinhole 148 b located in the third pixel circuit PC3 of the third pixelP3 is integrated with the second lower electrode 143 b.

According to embodiments, since the effective pinhole 148 a and thedummy pinhole 148 b shown in FIG. 16 are substantially the same as theeffective pinhole 148 a and the dummy pinhole 148 b already described inFIG. 14. a detailed description thereof will be omitted herein.

According to embodiments, since the upper light blocking member and thelower light blocking member of FIG. 16 are substantially that same asthe upper light blocking member and the lower light blocking memberalready described with respect to FIG. 14, a detailed descriptionthereof will be omitted herein.

According to embodiments, since the relationships between the ninthdistance I_9, the fourth distance I_4, the fifth distance I_5, theeighth distance I_8, and the seventh distance I_7 shown in FIG. 16 aresubstantially equal to the relationships between the ninth distance I_9.the fourth distance I_4, the fifth distance I_5, the eighth distanceI_8, and the seventh distance I_7 that have been already described inFIG. 14, a description thereof will be omitted herein.

FIG. 17 is a sectional view of an electroluminescent device shown inFIG. 6 in accordance with an embodiment of the present disclosure. FIG.18 is a plan view of an electroluminescent device shown in FIG. 17 inaccordance with an embodiment of the present disclosure. The descriptionof components already described in FIGS. 1A to 16 will be omittedherein.

Referring to FIGS. 1A to 18, according to embodiments, theelectroluminescent device 1 includes the fourth light blocking structure148 and a lower light blocking member 139. The fourth light blockingstructure 148 has at least one of the effective pinhole 148 a and/or thedummy pinhole 148 b.

According to embodiments, the fourth light blocking structure 148 andthe lower electrode 143 are disposed on the same layer. The fourth lightblocking structure 148 and the lower electrode 143 include the samematerial, and are formed by the same process. The fourth light blockingstructure 148 is spaced apart from the lower electrode 143. The fourthlight blocking structure 148 has a mesh structure that surrounds thelower electrodes 143 in plan view.

According to embodiments, the fourth light blocking structure 148includes an opaque material that can reflect or absorb light. Forinstance, the fourth light blocking structure 148 includes an opaqueconductive material The opaque conductive material includes a metal.

According to embodiments, the fourth light blocking structure 148 isconnected to the upper electrode 147 through the contact hole CH thatpenetrates at least the pixel defining layer 141. As one example, thecontact hole CH penetrates the pixel defining layer 141. As anotherexample, the contact hole CH penetrates the pixel defining layer 141 andthe spacer 142.

According to embodiments, when the fourth light blocking structure 148is connected to the upper electrode 147 through the contact hole CH andis connected to a second pixel power supply ELVSS shown in FIG. 21, avoltage drop of the upper electrode 147 can be reduced.

If the fourth light blocking structure 148 is in an electricallyfloating state without being electrically connected to the upperelectrode 147, the voltage of the fourth light blocking structure 148changes according to external influences, thus electricallyunpredictably affecting the transistor and the capacitor in the pixelcircuit PC. Thus, in other embodiments, if the fourth light blockingstructure 148 is not electrically connected to the upper electrode 147,the fourth light blocking structure 148 has a ground state with one of apredetermined positive voltage, a predetermined negative voltage and apredetermined 0V. That is, if the fourth light blocking structure 148 isnot electrically connected to the upper electrode 147, the fourth lightblocking structure 148 is electrically biased.

According to embodiments, since the effective pinhole 148 a and thedummy pinhole 148 b shown in FIG. 17 are substantially the same as theeffective pinhole 148 a and the dummy pinhole 148 b that have beenalready described in FIG. 14, a detailed description thereof will beomitted herein.

According to embodiments, since the upper light blocking member issubstantially that same as the upper light blocking member alreadydescribed with respect to FIG. 14, a detailed description thereof willbe omitted herein.

According to embodiments, the lower light blocking member 139 is locatedunder the dummy pinhole 148 b of the fourth light blocking structure148. The lower light blocking member 139 blocks the reflected light RLpassing through the dummy pinhole 148 b. The lower light blocking member139 is wider than the dummy pinhole 148 b. The lower light blockingmember 139 includes at least a part of the light blocking layer in thefirst light blocking structure 130. In some embodiments, the lightblocking layer is a conductive layer. For example, the light blockinglayer includes the same material as the fifth conductive pattern 137 cand the fifth dummy conductive pattern 138 e disposed on the thirdinterlayer insulation layer 135. and is formed in the same process.Alternatively, in other embodiment, the light blocking layer is aninsulation layer. For instance, the light blocking layer includes ablack matrix material.

According to embodiments, since the relationships between the ninthdistance I_9, the fourth distance I_4, the fifth distance I_5, theeighth distance I_8, and the seventh distance I_7 shown in FIG. 17 aresubstantially equal to the relationships between the ninth distance I_9,the fourth distance I_4, the fifth distance I_5, the eighth distanceI_8, and the seventh distance I_7 already described in FIG. 14, adescription thereof will be omitted herein.

FIG. 19 is a plan view of a positional relationship between effectivepinholes, lower electrodes, spacers and bridges in accordance with anembodiment of the present disclosure. At least one effective pinholeneeds to satisfy conditions described with reference to FIG. 19, but notall of the effective pinholes need to satisfy the conditions.

Referring to FIGS. 1A to 8C and FIG. 19. according to embodiments, aneffective pinhole EPH has a square shape in plane. Alternatively, inother embodiments, the effective pinhole EPH may have the shape of arectangle, a circle, an ellipse, or a polygon in plane.

According to embodiments, of the effective pinhole 130 a of the firstlight blocking structure 130, the effective pinhole 120 a of the secondlight blocking structure 120, and the effective pinhole 148 a of thefourth light blocking structure 148 shown in FIG. 14. a location wherethe focus F is formed becomes the effective pinhole EPH of FIG. 19.

According to embodiments, multiple lower electrodes 143, multiplespacers 142, and multiple bridges 240 a are located around the effectivepinhole EPH in plan view. The lower electrodes 143 include a first lowerelectrode 143 a, a second lower electrode 143 b, and a third lowerelectrode 143 c. The spacers 142 include a first spacer 142a and asecond spacer 142 b. The bridges 240 a include a first bridge 240 a_1and a second bridge 240 a_2.

According to embodiments, the multiple lower electrodes 143 include asingle first lower electrode 143 a that is firstly closest in plan viewto the focus F formed on the effective pinhole EPH. The shortestdistance between the single first lower electrode 143 a and the focus Fis a first distance D1 that is the length of a first line L1. The focusF is spaced apart from the inner wall ed of the effective pinhole EPH bya second distance D2 in an extension direction of the first line L1. Thefirst distance D1 is equal to or greater titan the second distance D2.For example, the first distance D1 is greater than the second distanceD2.

According to embodiments, the multiple lower electrodes 143 include asingle second lower electrode 143 b that is secondly closest in planview to the focus F formed on the effective pinhole EPH. Alternatively,in other embodiments, the multiple lower electrodes 143 include at leasttwo second lower electrodes 143 b that are secondly closest in plan viewto the focus F. The shortest distance between the second lower electrode143 b and the focus F is a third distance D3 that is the length of asecond line L2. The focus F is spaced apart from the inner wall ed ofthe effective pinhole EPH by a fourth distance D4 in an extensiondirection of the second line L2. The third distance D3 is equal to orgreater than the fourth distance D4. For example, the third distance D3is greater than the fourth distance D4.

According to embodiments, the multiple spacers 142 include a singlefirst spacer 142 a that is firstly closest in plan view to the focus Fformed on the effective pinhole EPH. The shortest distance between thesingle first spacer 142 a and the focus F is a fifth distance D5 that isthe length of a third line L3. The focus F is spaced apart from theinner wall ed of the effective pinhole EPH by a sixth distance D6 in anextension direction of the third line L3. The fifth distance D5 is equalto or greater than the sixth distance D6. For example, the fifthdistance D5 is greater than the sixth distance D6.

According to embodiments, the multiple spacers 142 include a singlesecond spacer 142 b that is secondly closest in plan view to the focus Fformed on the effective pinhole EPH. Alternatively, in otherembodiments, the multiple spacers 142 include at least two secondspacers 142 b that are secondly closest in plan view to the focus Fformed on the effective pinhole EPH. The shortest distance between thesecond spacer 142 b and the focus F is a seventh distance D7 that is thelength of a fourth line L4. The focus F is spaced apart from the innerwall ed of the effective pinhole EPH by an eighth distance D8 in anextension direction of the fourth line L4. The seventh distance D7 isequal to or greater than the eighth distance D8. For example, theseventh distance D7 is greater than the eighth distance D8.

According to embodiments, the multiple bridges 240 a include a singlefirst bridge 240 a_1 that is firstly closest in plan view to the focus Fformed on the effective pinhole EPH. The shortest distance between thesingle first bridge 240 a_1 and the focus F is a ninth distance D9 thatis the length of the fifth line L5. The focus F is spaced apart from theinner wall ed of the effective pinhole EPH by a tenth distance D10 in anextension direction of the fifth line L5. The ninth distance D9 is equalto or greater than the tenth distance D10. For example, the ninthdistance D9 is greater titan the tenth distance D10.

According to embodiments, the first bridge 240 a_1 has an overlap areaa_1 that overlaps the first sensing electrode 220 a_1 illustrated inFIG. 8A, and the light transmissivity of the touch sensing structure 200is lower at the overlap area a_1. Therefore, the fifth line L5 may beset between the focus F and the overlap area a_1 of the single firstbridge 240 a_1 that is firstly closest in plane to the focus F.

According to embodiments, the multiple bridges 240 a include a singlesecond bridge 240 a_2 that is secondly closest in plan view to the focusF formed on the effective pinhole EPH. Alternatively, in otherembodiments, the multiple bridges 240 a include at least two secondbridges 240 a_2 that are secondly closest in plan view to the focus Fformed on the effective pinhole EPH. The shortest distance between thefocus F and the second bridge 240 a_2 that is secondly closest in planeto the focus F is an eleventh distance D11 that is the length of a sixthline L6. The focus F is spaced apart from the inner wall ed of theeffective pinhole EPH by a twelfth distance D12 in an extensiondirection of the sixth line L6. The eleventh distance D11 is equal to orgreater than the twelfth distance D12. For example, the eleventhdistance D11 is greater than the twelfth distance D12.

According to embodiments, the second bridge 240 a_2 has an overlap areaa_2 that overlaps the second sensing electrode 220 a_2 illustrated inFIG. 8A. and the light transmissivity of the touch sensing structure 200is lower at the overlap area a_2. Therefore, the sixth line L6 may beset between the focus F and the overlap area a_2 of the single secondbridge 240 a_2 that is secondly closest in plane to the focus F.

According to embodiments, the first distance D1, the third distance D3,the fifth distance D5, the seventh distance D7, the ninth distance D0,and the eleventh distance D11 are equal to or greater than the seconddistance D2. The fourth distance D4, the sixth distance D6, the eighthdistance D8, the tenth distance D10, and the twelfth distance D12,respectively. Therefore, at least a part of an optical path along whichthe reflected light RL propagates is blocked to prevent an intensityreduction of the reflected light RL.

According to embodiments, the third distance D3 is equal to or greaterthan the first distance D1. The fifth distance D5 is equal to or greaterthan the third distance D3. The seventh distance D7 is equal to orgreater than the fifth distance D5. The ninth distance D9 is equal to orgreater than the seventh distance D7. The eleventh distance D11 is equalto or greater than the ninth distance D9. Therefore, the optical path ofthe reflected light RL can be sufficiently secured. Therefore, at leasta part of an optical path along which the reflected light RL propagatescan be blocked to prevent an intensity reduction of the reflected lightRL.

According to embodiments, a sum of the fifth distance D5 and the seventhdistance D7 is equal to or greater than a sum of the first distance D1and the third distance D3. A sum of the ninth distance D9 and theeleventh distance D11 is equal to or greater than the sum of the fifthdistance D5 and the seventh distance D7. Therefore, at least a part ofan optical path along which the reflected light RL propagates can beblocked to prevent an intensity reduction of the reflected light RL.

According to embodiments, a first angle θ1 between the first line L1 andthe second line L2 is not ‘k×180°’. Here, ‘k’ is an integer other thanzero. A second angle θ2 between the third line L3 and the fourth line L4is not ‘m×180°’. Here, ‘m’ is an integer other than zero. A third angle03 between the fifth line L5 and the sixth line 16 is not ‘n×180°’.Here, ‘n’ is an integer other than zero. At least one of the conditionsof the first angle θ1, the conditions of the second angle θ2, and/or theconditions of the third angle θ3 can be satisfied. Therefore, theformation of the effective pinhole EPH does not prevent the resolutionof the electroluminescent device 1 from increasing.

FIG. 20 is a plan view is the positional relationship between theeffective pinholes, the lower electrodes, the spacers and the bridges inaccordance with an embodiment of the present disclosure. A descriptionof components that have been already described in FIG. 19 will beomitted herein. At least one effective pinhole needs to satisfy theconditions described with reference to FIG. 20, but not all of theeffective pinholes need to satisfy the conditions.

Referring to FIGS. 1A to 20. according to embodiments, theelectroluminescent device 1 includes at least two lower electrodes 143that are firstly closest in plan view to the focus F formed on theeffective pinhole EPH. The shortest distance between the focus F andtire at least two lower electrodes 143 is a 13-th distance D13. The13-th distance D13 may correspond the first distance D1 or the thirddistance D3 illustrated in FIG. 19.

According to embodiments, the electroluminescent device 1 includes atleast two spacers 142 that are firstly closest in plan view to the focusF formed on the effective pinhole EPH. The shortest distance betweentire focus F and the at least two spacers 142 is a 14-th distance D14.The 14-th distance D14 may correspond the fifth distance D5 or theseventh distance D7 illustrated in FIG. 19.

According to embodiments, the electroluminescent device 1 includes atleast two bridges 240 a that are firstly closest in plan view to thefocus F formed on the effective pinhole EPH. The shortest distancebetween the focus F and the at least two bridges 240 a is a 15-thdistance D15. The 15-th distance D15 may correspond the ninth distanceD9 or the eleventh distance D11 illustrated in FIG. 19.

According to embodiments, the bridge 240 a has an overlap area a thatoverlaps the sensing electrode 220 a illustrated in FIG. 8A. and thelight transmissivity of the touch sensing structure 200 is lower at theoverlap area a. Therefore, the 15-th distance D15 may be set between thefocus F and the overlap areas a of at least two bridges 240 a that areFirstly closest to the focus F.

According to embodiments, the 14-th distance D14 is equal to or greaterthan the 13-th distance D13. The 15-th distance D15 is equal to orgreater than the 14-th distance D14. Therefore, the optical path of thereflected light RL can be sufficiently secured. Therefore, an intensityreduction of the reflected light RL may be prevented. The intensityreduction of the reflected light RL may be caused by blocking at least apan of an optical path along which the reflected light RL propagates.Besides, the distance between the focus F formed on the effectivepinhole EPH and the inner w all ed of the effective pinhole EPH islength R1.

FIG. 21 is a circuit diagram of a pixel circuit shown in FIG. 1A or FIG.1B in accordance with an embodiment of the present disclosure.

Referring to FIGS. 1A, 1B and 21, according to embodiments, the pixelPij is arranged in an i-th, row, where ‘i’ is a natural number, and aj-th column, where ‘j’ is a natural number, of the display area DA ofthe electroluminescent device 1. The pixel circuit PCij of the pixel Pijis coupled to an i-th scan line Si and a j-th data line Dj of thedisplay area DA. The pixel circuit PCij is coupled to a first pixelpower supply ELVDD and a second pixel power supply ELVSS.

According to embodiments, the pixel Pij includes the pixel circuit PCijand the electroluminescent unit ELUij. The pixel circuit PCij iselectrically coupled to the electroluminescent unit ELUij. An outerportion of the pixel circuit PCij substantially has the shape of atetragon, such as a square or a rectangle.

According to embodiments, the pixel circuit PCij is further coupled toat least one different scan line. For example, the pixel circuit PCij isfurther coupled to at least one of an i−1-th scan line Si−1 and/or ani+1-th scan line Si+1.

According to embodiments, the pixel circuit PCij is further coupled to athird power supply in addition to the first pixel power supply ELVDD andthe second pixel power supply ELVSS. For instance, the pixel circuitPCij is also coupled to an initialization power supply Vint.

According to embodiments, the pixel circuit PCij includes first toseventh transistors T1, T2, T3, T4, T5, T6 and T7 and a storagecapacitor Cst.

According to embodiments, a source electrode of the first transistor T1is coupled to the first pixel power supply ELVDD via the fifthtransistor T5. A drain electrode of the first transistor T1 is coupledto the electroluminescent unit ELUij via the sixth transistor T6. A gateelectrode of the first transistor T1 is coupled to a first node N1. Thefirst transistor T1 controls a driving current that flows between thefirst pixel power supply ELVDD and the second pixel power supply ELVSSso that the driving current flows through the electroluminescent unitELUij in response to the voltage of the first node N1.

According to embodiments, the second transistor T2 is coupled between aj-th data line Dj and the source electrode of the first transistor T1.The gate electrode of the second transistor T2 is coupled to the i-thscan line Si. When the scan signal of the gate-on voltage, such as a lowvoltage, is received from the i-th scan line Si, the second transistorT2 turns on to electrically connect the j-th data line Dj to the sourceelectrode of the first transistor T1. Hence, if the second transistor T2is turned on, a data signal received from the j-th data line Dj istransmitted to the first transistor T1.

According to embodiments, the third transistor T3 is coupled between thedrain electrode of the first transistor T1 and the first node N1. Thegate electrode of the third transistor T3 is coupled to the i-th scanline Si. When the scan signal of the gate-on voltage is received fromthe i-th scan line Si, the third transistor T3 turns on to electricallyconnect the drain electrode of the first transistor T1 to the first nodeN1.

According to embodiments, the fourth transistor T4 is coupled betweenthe first node N1 and the initialization power line IPL over which theinitialization power supply Vint is transmitted. The gate electrode ofthe fourth transistor T4 is coupled to a preceding scan line, such asthe i−1-th scan line Si−1. When the scan signal of the gate-on voltageis received from the i−1-th scan line Si−1, the fourth transistor T4turns on so that the voltage of the initialization power supply Vintflows to the first node Nl. Here, the initialization power supply Vinthas a voltage that is equal to or less than a minimum voltage of thedata signal.

According to embodiments, the fifth transistor T5 is coupled between thefirst pixel power supply ELVDD and the first transistor T1. The gateelectrode of the fifth transistor T5 is coupled to a correspondingemission control line, such as an i-th emission control line Ei. Thefifth transistor T5 turns off when an emission control signal having agate-off voltage is received by the i-th emission control line Ei, andcan be turned on in other cases.

According to embodiments, the sixth transistor T6 is coupled between thefirst transistor T1 and the electroluminescent unit ELUij. The gateelectrode of the sixth transistor T6 is coupled to the i-th emissioncontrol line Ei. The sixth transistor T6 turns off when an emissioncontrol signal having a gate-off voltage is supplied to the i-themission control line Ei, and may be turned on in other cases.

According to embodiments, the seventh transistor T7 is coupled betweenthe electroluminescent unit ELUij and the initialization power line IPL.The gate electrode of the seventh transistor T7 is coupled to any one ofscan lines of a subsequent stage, such as the i+1-th scan line Si+1.When the scan signal of the gate-on voltage is supplied to the i+1-thscan line Si+1, the seventh transistor T7 turns on so that tire voltageof the initialization power supply Vint flows to the electroluminescentunit ELUij.

According to embodiments, the storage capacitor Cst is coupled betweenthe first pixel power supply ELVDD and the first node N1. The storagecapacitor Cst stores a voltage that corresponds to the data signalsupplied to the first node N1 during each frame period and to thethreshold voltage of the first transistor T1.

According to embodiments, an anode of the electroluminescent unit ELUijis coupled to the first transistor T1 via the sixth transistor T6. and acathode of the electroluminescent unit ELUij is coupled to the secondpixel power supply ELVSS. The electroluminescent unit ELUij emits lighthaving a predetermined luminance that corresponds to current receivedfrom the first transistor T1. The voltage of the first pixel powersupply ELVDD to be transmitted to the pixel power line PL is higher thanthat of the second pixel power supply ELVSS to allow current to flow tothe electroluminescent unit ELUij. A potential difference between thefirst pixel power supply ELVDD and the second pixel power supply ELVSSis equal to or higher than a threshold voltage of the electroluminescentunit ELUij for the light emitting period of the pixel Pij.

FIG. 22 is a plan view of a pixel shown in FIG. 21 in accordance with anembodiment of the present disclosure. FIG. 23 is a sectional view takenalong line II-II′ of FIG. 22.

According to embodiments, of the scan lines Si−1, Si and Si+1 over whichthe scan signal is transmitted, an i−1-th row of the scan lines isreferred to as an “i−1-th scan line Si−1, an i-th row of the scan linesis referred to as an “i-th scan line Si”, and an i+1-th row of the scanlines is referred to as an “i+1-th scan line Si+1”. An i-th row of theemission control lines over which an emission control signal istransmitted is referred to as an “i-th emission control line Ei”. A j-thcolumn of the data lines over which a data signal is transmitted isreferred to as a “j-th data line Dj”. A j-th column of the pixel powerlines over which the first pixel power supply HLVDD is transmitted isreferred to as a “pixel power line PL”.

Referring to FIGS. 1A to 8C and FIGS. 21 to 23, according toembodiments, the pixel Pij is disposed on the transparent layer 110. Theelectroluminescent device 1 includes a display area DA and a non-displayarea NDA. The pixel Pij is disposed in the display area DA.

According to embodiments, the scan lines Si−1, Si and Si+1 transmit thescan signal to the pixel circuit PCij. The i-th emission control line Eitransmits the emission control signal to the pixel circuit PCij. Thej-th data line Dj transmits the data signal to the pixel circuit PCij.The initialization pow er line 1PL transmits the initialization power tothe pixel circuit PCij. The pixel power line PL transmits the firstpixel power supply ELVDD to the pixel circuit PCij.

According to embodiments, the scan lines Si−1. Si and Si+1 extend in thefirst direction DR1 on the transparent layer 110. The scan lines Si−1,Si, and Si+1 are sequentially arranged in the second direction DR2. Eachof the scan lines Si−1, Si, and Si+1 receive a scan signal. The scanlines Si−1, Si, and Si+1 are disposed on the gate insulation layer 132.

According to embodiments, the i-th emission control line Ei extends inthe first direction DR1 on the transparent layer 110. The i-th emissioncontrol line Ei is disposed on the gate insulation layer 132.

According to embodiments, the j-th data line Dj extends on thetransparent layer 110 in the second direction DR2 that intersecting withthe first direction DR1. The j-th data line Dj receives a data signal.The j-th data line Dj is disposed on the second interlayer insulationlayer 134.

According to embodiments, the pixel power line PL substantially extendsin the same direction as the j-th data line Dj, which is the seconddirection DR2, on the transparent layer 110. The first pixel powersupply ELVDD is transmitted over the pixel power line PL. The pixelpower line PL is disposed on the second interlayer insulation layer 134.

According to embodiments, the initialization power line IPL extends inthe first direction DR1 on the transparent layer 110. The initializationpower supply Vim is transmitted over the initialization power line IPL.The initialization power line IPL is disposed on the first interlayerinsulation layer 133.

According to embodiments, the pixel Pij includes an electroluminescentstructure 140 that includes at least one electroluminescent unit ELUij,a pixel circuit structure 130 that includes a pixel circuit PCij thatdrives the electroluminescent unit ELUij, and a second light blockingstructure 120 located between the pixel circuit structure 130 and thetransparent layer 110.

According to embodiments, the pixel circuit structure 130 includes theeffective pinholes 130 a. Therefore, the pixel circuit structure 130 isused as the first light blocking structure 130 to selectively transmitthe reflected light RL reflected by a user. Hereinafter, the pixelcircuit structure 130 is referred to as the first light blockingstructure 130.

According to embodiments, the second light blocking structure 120 isdisposed between the electroluminescent structure 140 and the imagesensor structure 160 to selectively transmit the incident reflectedlight RL.

According to embodiments, the second light blocking structure 120includes effective pinholes 120 a and a light blocking area 120 b. Thelight blocking area 120 b includes a light blocking material. Forexample, the light blocking area 120 b includes an opaque metal.

According to embodiments, the first light blocking structure 130includes the pixel circuit PCij coupled to the electroluminescent unitELUij.

According to embodiments, the pixel circuit PCij includes first toseventh transistors T1, T2, T3, T4, T5, T6 and T7 and the storagecapacitor Cst. The pixel circuit PCij is disposed on the insulationlayer 131.

According to embodiments, the first transistor T1 includes a first gateelectrode GE1, a first active pattern ACT1, a first source electrodeSE1, a first drain electrode DE1, and a first connection line CNL1. Thefirst gate electrode GE1 is coupled to a 3b-th drain electrode DE3 b ofa 3b-th transistor T3 b and a 4b-th drain electrode DE4 b of a 4b-thtransistor T4 b.

According to embodiments, the second transistor T2 includes a secondgate electrode GE2, a second active pattern ACT2, a second sourceelectrode SE2, and a second drain electrode DE2.

According to embodiments, the third transistor T3 has a double gatestructure to prevent current leakage. In other words, the thirdtransistor T3 includes a 3a-th transistor T3 a and a 3b-th transistor T3b. The 3a-th transistor T3 a includes a 3a-th gate electrode GE3 a, a3a-th active pattern ACT3 a, a 3a-th source electrode SE3 a, and a 3a-thdrain electrode DE3 a. The 3b-th transistor T3 b includes a 3b-th gateelectrode GE3 b, a 3b-th active pattern ACT3 b, a 3-bth source electrodeSE3 b, and a 3b-th drain electrode DE3 b. The other end of the 3b-thdrain electrode DE3 b is coupled to the first gate electrode GEI by tirefirst and second contact holes CH1 and CH2 and the first connection lineCNL1.

According to embodiments, the fourth transistor T4 has a double gatestructure to prevent current leakage, similar to the third transistorT3. In other words, the fourth transistor T4 includes a 4a-th transistorT4 a and a 4b-th transistor T4 b. The 4a-th transistor T4 a includes a4a-th gate electrode GE4 a, a 4a-th active pattern ACT4 a, a 4a-thsource electrode SE4 a, and a 4a-th drain electrode DE4 a. The 4b-thtransistor T4 b includes a 4b-th gate electrode GE4 b, a 4b-th activepattern ACT4 b, a 4b-th source electrode SE4 b, and a 4b-th drainelectrode DE4b The 4a-th source electrode SE4 a is coupled to anauxiliary connection line AUX through a ninth contact hole CH9. The4b-th drain electrode DE4 b is coupled to the first gate electrode GE1of the first transistor T1 through the first and second contact holesCH1 and CH2 and the first connection line CNL1.

According to embodiments, the fifth transistor T5 includes a fifth gateelectrode GE5, a fifth active pattern ACT5, a fifth source electrodeSE5, and a fifth drain electrode DE5. The fifth source electrode SE5 iscoupled to the pixel power line PL through a fifth contact hole CH5.

According to embodiments, the sixth transistor T6 includes a sixth gateelectrode GE6, a sixth active pattern ACT6, a sixth source electrodeSE6, and a sixth drain electrode DE6. The sixth source electrode SE6 iscoupled to the first drain electrode DE1 and the 3 a-th source electrodeSE3 a. The sixth drain electrode DE6 is coupled to a second connectionline CNL2 through a seventh contact hole CH7. The second connection lineCNL2 is coupled to a connection pattern CNP through a tenth contact holeCH10. The connection pattern CNP is coupled to the second connectionline CNL2 through the tenth contact hole CH10 that penetrates the thirdinterlayer insulation layer 135, and is coupled to the lower electrode143 of the electroluminescent structure 140 through the eleventh contacthole CH11 that penetrates the fifth interlayer insulation layer 136.

According to embodiments, the seventh transistor T7 includes a seventhgate electrode GE7, a seventh active pattern ACT7, a seventh sourceelectrode SE7. and a seventh drain electrode DE7. The seventh sourceelectrode SE7 is coupled to the sixth drain electrode DE6, and theseventh drain electrode DE7 is coupled to the initialization power lineIPL through an eighth contact hole CH8 and is coupled to the 4a-thsource electrode SE4 a of a pixel P(i+1)j corresponding the i+1-th rowof the scan lines.

According to embodiments, the storage capacitor Cst includes a capacitorlower electrode LE and a capacitor upper electrode UE. The capacitorlower electrode LE is integrated with the first gate electrode GE1 ofthe first transistor T1. The capacitor upper electrode UE overlaps thecapacitor lower electrode LE, and covers the capacitor lower electrodeLE when viewed from a plane. The capacitor upper electrode UE iselectrically connected to the pixel power line PL through third andfourth contact holes CH3 and CH4. The capacitor upper electrode UEincludes an opening OPN that corresponds to an area in which the firstcontact hole CH1 is formed. The first gate electrode GE1 of the firsttransistor T1 is coupled with the first connection line CNL1 through thefirst contact hole CH1.

According to embodiments, the electroluminescent unit ELUij includes thelower electrode 143, the upper electrode 147, and the luminous layer 145disposed between the lower electrode 143 and the upper electrode 147.All of the lower electrode 143, the luminous layer 145 and the upperelectrode 147 overlap each other without the intervention of aninsulation layer, so that an area where light is actually emitted is theluminous area.

According to embodiments, the first light blocking structure 130 of thesensing area SA has effective pinholes 130 a that overlap the effectivepinholes 120 a of the second light blocking structure 120. The focus Fof the reflected light RL is located on the effective pinhole 130 a ofthe first light blocking structure 130. In this case, the size of theeffective pinholes 130 a of the first light blocking structure 130 issmaller than that of the effective pinholes 120 a of the second lightblocking structure 120. Alternatively, in other embodiments, the focus Fof the reflected light RL is located on the effective pinhole 120 a ofthe second light blocking structure 120. In this case, the size of theeffective pinholes 120 a of the second light blocking structure 120 issmaller than that of the effective pinholes 130 a of the first lightblocking structure 130.

According to embodiments, the effective pinhole 130 a of the first lightblocking structure 130 is defined by at least two of the first to fifthconductive patterns 137 a, 137 b, 137 c, 137 d, and 137 e.

For example, according to embodiments, the first conductive pattern 137a is one of a seventh source electrode SE7, a first drain electrode DE1,a 3b-th active pattern ACT3 b, a 3b-th drain electrode DE3 b, a 4b-thdrain electrode DE4 b, and a 4a-th drain electrode DE4 a, which areshown in FIG. 23. The second conductive pattern 137 b is one of a i+1-thscan line Si+1, an i-th emission control line Ei, an i-th scan line Si,and an i−1-th scan line Si−1, which are shown in FIG. 23. The thirdconductive pattern 137 c is one of an initialization power line IPL anda capacitor upper electrode UE, which are shown in FIG. 23. The fourthconductive pattern 137 d is one of a pixel power line PL, a firstconnection line CNL1 and a second connection line CNL2, which are shownin FIG. 23. The fifth conductive pattern 137 e is a connection patternCNP shown in FIG. 23.

According to embodiments, the electroluminescent device 1 furtherincludes the touch sensing structure 200 disposed on theelectroluminescent structure 140. Since the touch sensing structure 200has been described in FIGS. 7 and 8D, a duplicate description thereofwill be omitted herein.

FIG. 24 is a plan view of a pixel shown in FIG. 21 in accordance with anembodiment of the present disclosure.

According to embodiments, the effective pinholes 130 a of the firstlight blocking structure 130 shown in FIG. 24 are defined by the j-thdata line Dj, the pixel power line PL, the i-th emission control lineHi, and the lower electrode 143.

According to embodiments, a part of the inner wall of the effectivepinhole 130 a of the first light blocking structure 130 is defined by apan of an outer wall of the lower electrode 143. In other words, thepart of the inner wall of the effective pinhole 130 a of the first lightblocking structure 130 and the part of the outer wall of the lowerelectrode 143 vertically correspond to each other. In this case, thelower electrode 143 is also included in the first light blockingstructure 130.

While various exemplary embodiments have been described above, thoseskilled in the an will appreciate that various modifications, additionsand substitutions are possible, without departing from the scope andspirit of the present disclosure.

Therefore, exemplary embodiments disclosed in this specification areonly for illustrative purposes rather than limiting the technical spiritof the present disclosure. The scope of exemplary embodiments of thepresent disclosure is defined by the accompanying claims.

An electroluminescent device according to an embodiment of the presentdisclosure can improve the accuracy of fingerprinting sensing by using alight emitting element provided in a pixel as a light source andincreasing the quantity of light of the light source.

Furthermore, an electroluminescent device according to an embodiment ofthe present disclosure has at least one effective pinhole provided in apixel, and the effective pinhole and some components of a touch sensingstructure are spaced apart from each other, thus increasing theintensity (or quantity ) of reflected light incident on an image sensor,and thereby allowing a user's fingerprint to be accurately sensed, andrealizing a slimmer electroluminescent device.

What is claimed is:
 1. An electroluminescent device, comprising: a firstinsulation layer; an electroluminescent structure including lowerelectrodes disposed on the first insulation layer, luminous layersdisposed on the lower electrodes, and an upper electrode disposed on theluminous layers; a first light blocking structure disposed under thefirst insulation layer and including first effective pinholes; and animage sensor structure disposed under the first light blocking structureand including effective image sensors that overlap the first effectivepinholes, wherein the lower electrodes do not overlap the firsteffective pinholes.
 2. The electroluminescent device of claim I, whereinthe first light blocking structure further includes first dummypinholes, the first dummy pinhole is located between the first effectivepinholes, and the first effective pinholes and the first dummy pinholesform a single grid arrangement in plan view.
 3. The electroluminescentdevice of claim 2, further comprising: a second light blocking structuredisposed between the first light blocking structure and the image sensorstructure, and including a second light blocking area and secondeffective pinholes. wherein the second light blocking area does notoverlap the first effective pinholes and blocks light passing throughthe first dummy pinholes, and the second effective pinholes overlap thefirst effective pinholes.
 4. The electroluminescent device of claim 1,further comprising: a second light blocking structure disposed betweenthe first light blocking structure and the image sensor structure, andincluding a second light blocking area and second effective pinholes,wherein the second light blocking area does not overlap the firsteffective pinholes, and the second effective pinholes overlap the firsteffective pinholes.
 5. The electroluminescent device of claim 4, whereinthe second light blocking area includes an additional pinhole.
 6. Theelectroluminescent device of claim 5, further comprising: a lightblocking member provided over or under the additional pinhole andoverlapping the additional pinhole.
 7. The electroluminescent device ofclaim 5, wherein the additional pinhole is smaller than the secondeffective pinhole.
 8. The electroluminescent device of claim 1, whereina shortest plane distance from an optical center of the first effectivepinhole to the lower electrodes is greater than a plane distancemeasured from the optical center of the first effective pinhole to aninner wall of the first effective pinhole in a first direction in whichthe shortest plane distance from the optical center of the firsteffective pinhole to the lower electrodes is measured.
 9. Theelectroluminescent device of claim 8, wherein the lower electrodesinclude a single first lower electrode that is firstly closest in planview to the optical center of the first effective pinhole, and a singlesecond lower electrode that is secondly closest in plan view to theoptical center of the first effective pinhole.
 10. Theelectroluminescent device of claim 9, wherein a shortest plane distancefrom the optical center of the first effective pinhole to the singlesecond lower electrode is measured in a second direction, and an anglebetween the first and second directions is not k×180°, where k isintegers other than zero.
 11. The electroluminescent device of claim 8,wherein the lower electrodes include a single first lower electrode thatis firstly closest in plan view to the optical center of the firsteffective pinhole, and at least two second lower electrodes that aresecondly closest in plan view to the optical center of the firsteffective pinhole.
 12. The electroluminescent device of claim 8, whereinthe lower electrodes include at least two first lower electrodes thatare firstly closest in plan view to the optical center of the firsteffective pinhole.
 13. The electroluminescent device of claim 8, furthercomprising: a pixel defining layer disposed on the first insulationlayer and covering edges of the lower electrodes, and spacers disposedon the pixel defining layer to be higher than the pixel defining layer,wherein a shortest plane distance from the optical center of the firsteffective pinhole to the spacers is greater titan the shortest planedistance from the optical center of the first effective pinhole to thelower electrodes.
 14. The electroluminescent device of claim 13, furthercomprising: a touch sensing structure including touch sensing electrodesand bridges, and located above the electroluminescent structure, whereinthe bridge electrically couples two neighboring touch sensing electrodesto each other, and a shortest plane distance from the optical center ofthe first effective pinhole to the bridges is greater than the shortestplane distance from the optical center of the first effective pinhole tothe spacers.
 15. The electroluminescent device of claim 1, furthercomprising: a pixel defining layer disposed on the first insulationlayer and covering edges of the lower electrodes, and spacers disposedon the pixel defining layer to be higher than the pixel defining layer,wherein a shortest plane distance from an optical center of the firsteffective pinhole to the spacers is greater than a plane distancemeasured from the optical center of the first effective pinhole to aninner wall of the first effective pinhole in a third direction in whichthe shortest plane distance from the optical center of the firsteffective pinhole to the spacers is measured.
 16. The electroluminescentdevice of claim 15, wherein the spacers include a single first spacerthat is firstly closest in plan view to the optical center of the firsteffective pinhole, and a single second spacer that is secondly closestin plan view to the optical center of the first effective pinhole. 17.The electroluminescent device of claim 16, wherein a shortest planedistance from the optical center of the first effective pinhole to thesingle second spacer is measured in a fourth direction, and the thirdand fourth directions form a second angle, and the second angle is notm×180°, where m is integers other than zero.
 18. The electroluminescentdevice of claim 15, wherein the spacers include a single first spacerthat is firstly closest in plan view to the optical center of the firsteffective pinhole, and at least two second spacers that are secondlyclosest in plan view to the optical center of the first effectivepinhole.
 19. The electroluminescent device of claim 15, wherein thespacers include at least two first spacers that are firstly closest inplan view to the optical center of the first effective pinhole.
 20. Theelectroluminescent device of claim 15, further comprising: a touchsensing structure including touch sensing electrodes and bridges, andlocated above the electroluminescent structure, wherein the bridgeelectrically couples two neighboring touch sensing electrodes to eachother, and a shortest plane distance from the optical center of thefirst effective pinhole to the bridges is greater than the shortestplane distance from the optical center of the first effective pinhole tothe spacers.
 21. The electroluminescent device of claim 1, furthercomprising: a touch sensing structure including touch sensing electrodesand bridges, and located above the electroluminescent structure, whereinthe bridge electrically couples two neighboring touch sensing electrodesto each other, and a shortest plane distance from an optical center ofthe first effective pinhole to the bridges is greater than a planedistance measured from the optical center of the first effective pinholeto an inner wall of the first effective pinhole in a fifth direction inwhich the shortest plane distance from the optical center of the firsteffective pinhole to the bridges is measured.
 22. The electroluminescentdevice of claim 21, wherein the bridges include a single first bridgethat is firstly closest in plan view to the optical center of the firsteffective pinhole, and a single second bridge that is secondly closestin plan view to the optical center of the first effective pinhole. 23.The electroluminescent device of claim 22, wherein a shortest planedistance from the optical center of the first effective pinhole to thesingle second bridge is measured in a sixth direction, and the fifth andsixth directions form a third angle, and the third angle is n×180°,where n is integers other than zero.
 24. The electroluminescent deviceof claim 21, wherein the bridges include a single first bridge that isfirstly closest in plan view to the optical center of the firsteffective pinhole, and at least two second bridges that are secondlyclosest in plan view to the optical center of the first effectivepinhole.
 25. The electroluminescent device of claim 21, wherein thebridges include at least two first bridges that are firstly closest inplan view to the optical center of the first effective pinhole.
 26. Theelectroluminescent device of claim 1, further comprising. a touchsensing structure including bridges and touch sensing electrodesdisposed on a different layer from the bridges, and the touch sensingstructure being located above the electroluminescent structure, whereinthe bridge electrically couples two neighboring touch sensing electrodesto each other, the bridges include overlap areas overlapping the touchsensing electrodes, and a shortest plane distance from an optical centerof the first effective pinhole to the overlap areas is greater than aplane distance measured from the optical center of the first effectivepinhole to an inner wall of the first effective pinhole in a directionin which the shortest plane distance from the optical center of thefirst effective pinhole to the overlap areas is measured.
 27. Theelectroluminescent device of claim 1, wherein the electroluminescentstructure has overlap areas where at least two luminous layers overlap,and the first effective pinhole overlaps the overlap area.
 28. Theelectroluminescent device of claim 27, further comprising; a pixeldefining layer disposed on the first insulation layer and covering edgesof the lower electrodes, and spacers disposed on the pixel defininglayer to be higher than the pixel defining layer, wherein the overlaparea does not overlap the spacers.
 29. The electroluminescent device ofclaim 1, further comprising, a pixel defining layer disposed on thefirst insulation layer and covering edges of the lower electrodes, andspacers disposed on the pixel defining layer to be higher than the pixeldefining layer, wherein the spacer has a curved edge between side andupper surfaces of the spacer in a cross-section, the spacer has a curvededge in plan view, and the spacer overlaps the first effective pinhole.30. The electroluminescent device of claim 1, wherein the image sensorstructure further includes a dummy image sensor located between theeffective image sensors.
 31. An electroluminescent device, comprising.an electroluminescent structure including lower electrodes disposed onan insulation layer, luminous layers disposed on the lower electrodes,and an upper electrode disposed on the luminous layers: a first lightblocking structure located on a same layer as the lower electrodes; andan image sensor structure located under the insulation layer andincluding effective image sensors, wherein the electroluminescentstructure includes luminous areas where the lower electrodes, theluminous layers and the upper electrode overlap each other to emitlight, and the first light blocking structure includes a first effectivepinhole overlapping the effective image sensor.
 32. Theelectroluminescent device of claim 31, wherein the first light blockingstructure is integrally formed with the lower electrode as a singlepiece.
 33. The electroluminescent device of claim 31, wherein the firstlight blocking structure is not electrically coupled to the lowerelectrodes. the first light blocking structure has a shape of an islandthat does not surround the lower electrode, and the first light blockingstructure is provided in plurality.
 34. The electroluminescent device ofclaim 33, wherein the first light blocking structure is electricallycoupled to the upper electrode.
 35. The electroluminescent device ofclaim 31, wherein the first light blocking structure is not electricallycoupled to the lower electrodes. the first light blocking structure hasa mesh shape with a hole, and the hole surrounds the lower electrode.36. The electroluminescent device of claim 35, wherein the first lightblocking structure is electrically coupled to the upper electrode. 37.The electroluminescent device of claim 31, further comprising a secondlight blocking structure located between the first light blockingstructure and the image sensor structure, and including second effectivepinholes, wherein the first effective pinhole overlaps the secondeffective pinhole, and the first effective pinhole is smaller than thesecond effective pinhole.
 38. An electroluminescent device, comprising:an electroluminescent structure including lower electrodes, luminouslayers disposed on the lower electrodes, and an upper electrode disposedon the luminous layers; a light blocking structure disposed under theelectroluminescent structure and including includes effective pinholes;an image sensor structure disposed under the light blocking structureand including image sensors overlapping the effective pinholes; and atouch sensing structure including touch sensing electrodes and bridgesand located above the electroluminescent structure, wherein the lowerelectrodes do not overlap the effective pinholes, the bridgeelectrically couples two neighboring touch sensing electrodes to eachother, and at least one selected from a group of the touch sensingelectrode and the bridge includes at least one opening overlapping theeffective pinholes.
 39. The electroluminescent device of claim 38,wherein the electroluminescent structure comprises luminous areas wherethe lower electrodes, the luminous layers and the upper electrodeoverlap each other to emit light, the at least one selected from thegroup of the touch sensing electrode and the bridge further includes ahole overlapping the luminous area, and a size of the opening is greaterthan a size of the hole.